Method for manufacturing semiconductor device

ABSTRACT

Electrical characteristics of transistors using an oxide semiconductor are greatly varied in a substrate, between substrates, and between lots, and the electrical characteristics are changed due to heat, bias, light, or the like in some cases. In view of the above, a semiconductor device using an oxide semiconductor with high reliability and small variation in electrical characteristics is manufactured. In a method for manufacturing a semiconductor device, hydrogen in a film and at an interface between films is removed in a transistor using an oxide semiconductor. In order to remove hydrogen at the interface between the films, the substrate is transferred under a vacuum between film formations. Further, as for a substrate having a surface exposed to the air, hydrogen on the surface of the substrate may be removed by heat treatment or plasma treatment.

TECHNICAL FIELD

The present invention relates to a film formation apparatus and a method for manufacturing a semiconductor device using the film formation apparatus.

Note that in this specification, a semiconductor device refers to any device that can function by utilizing semiconductor characteristics, and an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

BACKGROUND ART

In recent years, attention has been focused on a technique for forming transistors using semiconductor thin films formed over a substrate having an insulating surface. The transistors are applied to a wide range of electronic devices such as an integrated circuit (IC) or an image display device (display device). As materials of semiconductor thin films applicable to the transistors, silicon-based semiconductor materials have been widely known, but oxide semiconductors have been attracting attention as alternative materials.

For example, disclosure is made of a transistor having an active layer for which an oxide semiconductor that contains indium (In), gallium (Ga), and zinc (Zn) and has an electron carrier concentration less than 10¹⁸/cm³ is used, and a sputtering method is considered the most suitable as a method for forming a film of the oxide semiconductor (see Patent Document 1).

REFERENCE

-   [Patent Document 1] Japanese Published Patent Application No.     2006-165528

DISCLOSURE OF INVENTION

Electrical characteristics of transistors using an oxide semiconductor are greatly varied in a substrate, between substrates, and between lots, and the electrical characteristics are changed due to heat, bias, light, or the like in some cases. In view of the above, an object is to manufacture a semiconductor device using an oxide semiconductor with high reliability and small variation in electrical characteristics.

It is known that in a transistor using an oxide semiconductor, part of hydrogen serves as a donor to generate an electron. The generation of an electron causes drain current to flow even without applying a gate voltage; thus, the threshold voltage shifts in the negative direction. A transistor using an oxide semiconductor is likely to have n-type conductivity, and it comes to have normally-on characteristics by a shift of threshold voltage in the negative direction. Here, “normally on” means a state where a channel exists without applying voltage to a gate electrode and current flows through a transistor.

Further, the threshold voltage of a transistor might change due to entry of hydrogen into an oxide semiconductor film after manufacturing the transistor. A change in the threshold voltage significantly impairs the reliability of the transistor.

The present inventor has found that film formation causes unintended inclusion of hydrogen in a film. Note that in this specification, “hydrogen” refers to a hydrogen atom or a hydrogen ion and for example, includes hydrogen derived from a hydrogen molecule, hydrocarbon, a hydroxyl group, water, and the like in the expression “including hydrogen”.

One embodiment of the present invention is a method for manufacturing a semiconductor device by which hydrogen in a film and at an interface between films is removed in a transistor using an oxide semiconductor. In order to remove hydrogen at an interface between films, a substrate is not exposed to the air between film formations. The substrate is preferably transferred under a vacuum. Further, as for a substrate having a surface exposed to the air, hydrogen on the surface of the substrate may be removed by heat treatment or plasma treatment.

In order to remove hydrogen in a film, hydrogen on a surface of a substrate over which a film is to be formed, hydrogen in a material of the film, and hydrogen in a film formation chamber are reduced.

Hydrogen taken into the film may be removed by heat treatment or plasma treatment.

Heat treatment or plasma treatment may be performed in order to reduce the hydrogen concentration of the surface of the substrate over which a film is to be formed and the hydrogen concentration of the film.

In one embodiment of the present invention, heat treatment is performed in an inert atmosphere, a reduced-pressure atmosphere, or a dry air atmosphere. Further, the inert atmosphere refers to an atmosphere containing an inert gas (such as nitrogen or a rare gas (e.g., helium, neon, argon, krypton, or xenon)) as the main component, and preferably contains no hydrogen. For example, the purity of the inert gas to be introduced is greater than or equal to 8N (99.999999%), preferably greater than or equal to 9N (99.9999999%). Alternatively, the inert atmosphere refers to an atmosphere that contains an inert gas as the main component and contains a reactive gas at a concentration less than 0.1 ppm. The reactive gas is a gas that reacts with a semiconductor, metal, or the like. The reduced-pressure atmosphere refers to an atmosphere with a pressure of lower than or equal to 10 Pa. The dry air atmosphere is a dew point lower than or equal to −40° C., preferably a dew point lower than or equal to −50° C.

The plasma treatment can be performed at low temperature and can remove hydrogen efficiently in a short time. In particular, the plasma treatment is effective in removing hydrogen strongly bonded to a surface of a substrate.

Further, entry of hydrogen from the outside can be suppressed by films between which a transistor is interposed and which block hydrogen.

According to one embodiment of the present invention, hydrogen contained in an oxide semiconductor film can be reduced, and a transistor having stable electrical characteristics with less variation in threshold voltage can be provided.

Alternatively, according to one embodiment of the present invention, hydrogen in a film in contact with an oxide semiconductor film can be reduced, and thus entry of hydrogen into the oxide semiconductor film can be suppressed. Consequently, a semiconductor device having a transistor with favorable electrical characteristics and high reliability can be provided.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a flow chart showing a path of a substrate in a process of manufacturing a semiconductor device that is one embodiment of the present invention.

FIGS. 2A to 2D are cross-sectional views showing an example of a process of manufacturing a semiconductor device that is one embodiment of the present invention.

FIG. 3 is a top view showing an example of a film formation apparatus that is one embodiment of the present invention.

FIGS. 4A to 4D are cross-sectional views showing an example of a manufacturing process of a semiconductor device that is one embodiment of the present invention.

FIGS. 5A to 5C are a top view and cross-sectional views showing an example of a semiconductor device that is one embodiment of the present invention.

FIG. 6 is a flow chart showing a path of a substrate in a process of manufacturing a semiconductor device that is one embodiment of the present invention.

FIGS. 7A to 7C are cross-sectional views showing an example of a process of manufacturing a semiconductor device that is one embodiment of the present invention.

FIGS. 8A to 8E are cross-sectional views showing an example of a process of manufacturing a semiconductor device that is one embodiment of the present invention.

FIGS. 9A to 9C are cross-sectional views showing an example of a process of manufacturing a semiconductor device that is one embodiment of the present invention.

FIGS. 10A to 10E are cross-sectional views showing an example of a process of manufacturing a semiconductor device that is one embodiment of the present invention.

FIG. 11 is a circuit diagram showing an example of a pixel in a display device that is one embodiment of the present invention.

FIGS. 12A and 12B are a top view and a cross-sectional view showing an example of a pixel in a display device that is one embodiment of the present invention.

FIGS. 13A to 13F are cross-sectional views showing an example of a process of manufacturing a pixel in a display device that is one embodiment of the present invention.

FIGS. 14A to 14C are cross-sectional views showing an example of a process of manufacturing an oxide semiconductor film that is one embodiment of the present invention.

FIGS. 15A and 15B are a top view and a cross-sectional view showing an example of a display device that is one embodiment of the present invention. FIGS. 16A to 16F each show an example of an electronic device that is one embodiment of the present invention.

FIG. 17 is a cross-sectional view showing an example of a semiconductor device that is one embodiment of the present invention.

FIG. 18 is a top view showing an example of a film formation apparatus that is one embodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details disclosed herein can be modified in various ways. Further, the present invention is not construed as being limited to description of the following embodiments. In describing structures of the present invention with reference to the drawings, the same reference numerals are used in common for the same portions in different drawings. Note that the same hatch pattern is applied to similar parts, and the similar parts are not especially denoted by reference numerals in some cases.

Note that the ordinal numbers such as “first” and “second” in this specification are used for convenience and do not denote the order of steps or the stacking order of layers. In addition, the ordinal numbers in this specification do not denote particular names which specify the present invention.

Embodiment 1

In this embodiment, description is made on a method for manufacturing a top-gate top-contact transistor using an oxide semiconductor with less entry of hydrogen into a film and an interface between films.

FIG. 1 is a flow chart showing a path of a substrate in a multi-chamber film formation apparatus. FIGS. 2A to 2D are cross-sectional views that shows a method for manufacturing a semiconductor device and corresponds to the flow diagram in FIG. 1.

FIG. 3 is a multi-chamber film formation apparatus. The film formation apparatus includes a substrate supply chamber 11 having three cassette ports 14 accommodating a substrate, a load lock chamber 12 a, a load lock chamber 12 b, a transfer chamber 13, a substrate processing chamber 15, a film formation chamber 10 a with a leakage rate less than or equal to 1×10⁻¹⁰ Pa·m³/sec, a film formation chamber 10 b with a leakage rate less than or equal to 1×100 Pa·m³/sec, and a film formation chamber 10 c with a leakage rate less than or equal to 1×100 Pa·m³/sec. The substrate supply chamber is connected to the load lock chamber 12 a and the load lock chamber 12 b. The load lock chamber 12 a and the load lock chamber 12 b are connected to the transfer chamber 13. The substrate processing chamber 15 and the film formation chambers 10 a to 10 c are each connected only to the transfer chamber 13. A gate valve is provided for a connecting portion of each chamber so that each chamber can be independently kept in a vacuum state. Note that a film formation gas having a purity greater than or equal to 99.999999% can be introduced into the film formation chambers 10 a to 10 c. Although not shown, the transfer chamber 13 has one or more substrate transfer robots. Here, the atmosphere in the substrate processing chamber 15 can be controlled to be the one containing almost no hydrogen (e.g., an inert atmosphere, a reduced-pressure atmosphere, or a dry air atmosphere); for example, a dry nitrogen atmosphere having a dew point of lower than or equal to −40° C., preferably lower than or equal to −50° C., is possible. Here, the substrate processing chamber 15 preferably also serves as a substrate heating chamber and a plasma treatment chamber. With a single wafer multi-chamber film formation apparatus, a substrate does not need to be exposed to air between treatments, and adsorption of hydrogen to a substrate can be suppressed. In addition, the order of film formation, heat treatment, or the like can be freely created. Note that the numbers of the film formation chambers, the load lock chambers, and the substrate processing chambers are not limited to the above numbers, and can be determined as appropriate depending on the space for placement or the process.

First, as shown in a step S501 in FIG. 1, a substrate 100 is put on the cassette port 14 in the substrate supply chamber 11.

Next, as shown in a step S502 in FIG. 1, a gate valve of the load lock chamber 12 a set to an atmospheric pressure state is opened, the substrate 100 is transferred from the cassette port 14 to the load lock chamber 12 a with a first transfer robot, and then the gate valve is closed.

The load lock chamber 12 a is evacuated and set to a vacuum state after the substrate 100 is introduced into the load lock chamber 12 a. As shown in a step S503 in FIG. 1, a gate valve between the load lock chamber 12 a in the vacuum state and the transfer chamber 13 in a vacuum state is opened, the substrate 100 is transferred to the transfer chamber 13 with a second transfer robot, and then the gate valve is closed.

After the substrate 100 is introduced into the transfer chamber 13, as shown in a step S504 in FIG. 1, a gate valve between the transfer chamber 13 and the substrate processing chamber 15 in a vacuum state is opened, the substrate 100 is transferred to the substrate processing chamber 15 with the second robot, and then the gate valve is closed.

After the substrate 100 is introduced into the substrate processing chamber 15, the substrate 100 is subjected to heat treatment or plasma treatment (see FIG. 2A). By subjecting the substrate 100 to the heat treatment or the plasma treatment, the substrate 100 can be dehydrated or dehydrogenated. The heat treatment or the plasma treatment is performed at a temperature higher than or equal to 300° C. and lower than the strain point of the substrate, preferably higher than or equal to 400° C. and lower than or equal to 550° C. in an inert atmosphere, a reduced-pressure atmosphere, or a dry air atmosphere. A resistance heating method or the like may be used for the heating. Alternatively, rapid thermal anneal (RTA) treatment, such as gas rapid thermal anneal (GRTA) treatment or lamp rapid thermal anneal (LRTA) treatment, can be used. The LRTA treatment is treatment for heating an object by radiation of light (an electromagnetic wave) emitted from a lamp, such as a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, or a high-pressure mercury lamp. A GRTA apparatus is an apparatus for performing heat treatment using a high-temperature gas. As the gas, an inert gas is used. When heat treatment is performed in a short time using RTA, it is possible not to warp the substrate even at a temperature higher than or equal to the strain point of the substrate, so that the substrate can be dehydrated and dehydrogenated efficiently. For example, the substrate temperature may be higher than or equal to 500° C. and lower than or equal to 650° C. and the treatment time may be higher than or equal to 1 minute and less than or equal to 10 minutes. By plasma treatment, hydrogen absorbed on a surface of the substrate can be removed with plasma generated in an atmosphere of a rare gas, oxygen, nitrogen, or the like. Further, by plasma treatment, hydrogen which is strongly bonded to the substrate 100 can be removed efficiently. For example, argon plasma treatment may be performed by a reverse sputtering method.

After the dehydration or the dehydrogenation of the substrate 100, as shown in a step S505 in FIG. 1, the gate valve between the transfer chamber 13 and the substrate processing chamber 15 is opened, the substrate 100 is transferred to the transfer chamber 13 with the second transfer robot, and then the gate valve is closed.

After the substrate 100 is introduced into the transfer chamber 13, a gate valve between the transfer chamber 13 and the film formation chamber 10 c in a vacuum state is opened, as shown in a step S506 in FIG. 1, the substrate 100 is transferred to the film formation chamber 10 c with the second transfer robot, and then the gate valve is closed.

After the substrate 100 is introduced into the film formation chamber 10 c, a base insulating film 102 is formed to have a thickness of greater than or equal to 100 nm and less than or equal to 500 nm over the substrate 100 (see FIG. 2B). The base insulating film 102 is formed by a film formation method such as a sputtering method, a molecular beam epitaxy (MBE) method, a CVD method, a pulse laser deposition method, or an atomic layer deposition (ALD) method.

A single layer or a stacked layer of silicon oxide, silicon oxynitride, silicon nitride, silicon nitride oxide, gallium oxide, gallium aluminum oxide (Ga_(x)Al_(2-x)O_(3+y) (x is greater than or equal to 0 and less than or equal to 2, and y is greater than 0 and less than 1)), aluminum oxide, aluminum oxynitride, aluminum nitride oxide, aluminum nitride, or the like is used for a material of the base insulating film 102. For example, the base insulating film 102 has a layered structure of a silicon nitride film and a silicon oxide film, so that entry of moisture into a transistor 150 from the substrate or the like can be prevented. When the base insulating film 102 is formed to have a layered structure, a film which is in contact with an oxide semiconductor film 106 formed later may be an insulating film (e.g., silicon oxide, silicon oxynitride, or aluminum oxide) from which oxygen is released by heating. Thus, oxygen is supplied from the base insulating film 102 to the oxide semiconductor film 106, so that oxygen deficiency in the semiconductor film 106 and the interface state between the base insulating film 102 and the oxide semiconductor film 106 can be reduced. The oxygen deficiency of the oxide semiconductor film 106 causes the threshold voltage to shift in the negative direction, and the interface state between the base insulating film 102 and the oxide semiconductor film 106 reduces the reliability of the transistor.

Note that here, silicon oxynitride refers to silicon that includes more oxygen than nitrogen. In the case where measurements are performed using Rutherford backscattering spectrometry (RBS) and hydrogen forward scattering spectrometry (HFS), silicon oxynitride includes oxygen, nitrogen, and silicon at concentrations ranging from 50 at. % to 70 at. %, 0.5 at. % to 15 at. %, and 25 at. % to 35 at. % respectively. Further, silicon nitride oxide means silicon that includes more nitrogen than oxygen. In the case where measurements are conducted using RBS and HFS, silicon nitride oxide preferably contains oxygen, nitrogen, silicon, and hydrogen at concentrations ranging from 5 at. % to 30 at. %, 20 at. % to 55 at. %, 25 at. % to 35 at. %, and 10 at. % to 30 at. % respectively. Note that percentages of nitrogen, oxygen, silicon, and hydrogen fall within the ranges given above, where the total number of atoms contained in the silicon oxynitride film or the silicon nitride oxide film is defined as 100 at. %.

Aluminum oxynitride refers to a substance that contains more oxygen than nitrogen. Further, aluminum nitride oxide refers to a substance that contains more nitrogen than oxygen.

The “insulating film that releases oxygen by heating” refers to an insulating film from which the amount of released oxygen is greater than or equal to 1.0×10¹⁸ atoms/cm³, preferably greater than or equal to 1.0×10²⁰ atoms/cm³, further preferably greater than or equal to 3.0×10²⁰ atoms/cm³ when converted into oxygen atoms by thermal desorption spectroscopy (TDS) analysis.

Here, a method in which the amount of released oxygen is measured by being converted into oxygen atoms using TDS analysis will be described.

The amount of released gas in TDS analysis is proportional to the integral value of a spectrum. Therefore, the amount of released gas can be calculated from the ratio between the integral value of a spectrum of an insulating film and the reference value of a standard sample. The reference value of a standard sample refers to the ratio of the density of a predetermined atom contained in a sample to the integral value of a spectrum.

For example, the number of the released oxygen molecules (N_(O2)) from an insulating film can be found according to an equation 1 with the TDS analysis results of a silicon wafer containing hydrogen at a predetermined density which is the standard sample and the TDS analysis results of the insulating film. Here, all spectra having a mass number of 32 which are obtained by the TDS analysis are assumed to originate from an oxygen molecule. CH₃OH, which is given as a gas having a mass number of 32, is not taken into consideration on the assumption that it is unlikely to be present. Further, an oxygen molecule including an oxygen atom having a mass number of 17 or 18 which is an isotope of an oxygen atom is also not taken into consideration because the proportion of such a molecule in the natural world is minimal.

N_(O2)═N_(H2)/S_(H2)×S_(O2)×α  (Equation 1)

N_(H2) is a value obtained by conversion of the number of hydrogen molecules desorbed from the standard sample into density. S_(H2) is an integral value of spectrum of a standard sample which is analyzed by TDS. Here, the reference value of the standard sample is set to N_(H2)/S_(H2). S_(O2) is the integral value of a spectrum when the insulating film is subjected to TDS analysis. α is a coefficient which influences spectrum intensity in TDS analysis. Refer to Japanese Published Patent Application No. H6-275697 for details of the Equation 1. Note that the amount of released oxygen from the above insulating film is measured with a thermal desorption spectroscopy apparatus produced by ESCO Ltd., EMD-WA1000S/W using a silicon wafer containing a hydrogen atom at 1×10¹⁶ atoms/cm³ as the standard sample.

Further, in the TDS analysis, oxygen is partly detected as an oxygen atom. The ratio between oxygen molecules and oxygen atoms can be calculated from the ionization rate of the oxygen molecules. Note that, since the above a includes the ionization rate of the oxygen molecules, the number of the released oxygen atoms can also be estimated through the evaluation of the number of the released oxygen molecules.

Note that N_(O2) is the number of the released oxygen molecules. For the insulating film, the amount of released oxygen when converted into oxygen atoms is twice the number of the released oxygen molecules.

In the above structure, the insulating film that releases oxygen by heating may be oxygen-excess silicon oxide (SiO_(X)(X>2)). In the oxygen-excess silicon oxide (SiO_(X)(X>2)), the number of oxygen atoms per unit volume is more than twice the number of silicon atoms per unit volume. The number of silicon atoms and the number of oxygen atoms per unit volume are measured by Rutherford backscattering spectrometry.

In the case where a mixed gas of oxygen and a rare gas is used as a film formation gas when the insulating layer from which oxygen is released by heating is formed by a sputtering method, the ratio of oxygen to the rare gas is preferably high. For example, the oxygen concentration in the whole gas may be greater than or equal to 6% and less than or equal to 100%. An oxide target is preferably used.

After the base insulating film 102 is formed over the substrate 100, as shown in a step S507 in FIG. 1, the gate valve between the transfer chamber 13 and the film formation chamber 10 c is opened, the substrate 100 is transferred to the transfer chamber 13 with the second transfer robot, and then the gate valve is closed.

Although not shown, then, the gate valve between the transfer chamber 13 and the substrate processing chamber 15 in the vacuum state is opened, the substrate 100 is transferred to the substrate processing chamber 15 with the second transfer robot, the gate valve is closed, and then the substrate 100 may be subjected to heat treatment. The heat treatment is performed at a temperature of higher than or equal to 150° C. and lower than or equal to 280° C., preferably higher than or equal to 200° C. and lower than or equal to 250° C. in an inert atmosphere, a reduced-pressure atmosphere, or a dry air atmosphere. Through the above, hydrogen can be removed from the substrate 100 and the base insulating film 102. Note that the temperature at which hydrogen is removed from the base insulating film 102 but oxygen is released as little as possible is preferable. After the substrate 100 is subjected to the heat treatment, the gate valve between the transfer chamber 13 and the substrate processing chamber 15 is opened, the substrate 100 is transferred to the transfer chamber 13 with the second transfer robot, and then the gate valve is closed.

After the substrate 100 is introduced into the transfer chamber 13, a gate valve between the transfer chamber 13 and the film formation chamber 10 a in a vacuum state is opened, as shown in a step S508 in FIG. 1, the substrate 100 is transferred to the film formation chamber 10 a with the second transfer robot, and then the gate valve is closed.

After the substrate 100 is introduced into the film formation chamber 10 a, the oxide semiconductor film 106 is formed to have a thickness of greater than or equal to 3 nm and less than or equal to 50 nm over the base insulating film 102 (see FIG. 2C). The oxide semiconductor film 106 is formed by a film formation method such as a sputtering method, a MBE method, a CVD method, a pulse laser deposition method, or an ALD method.

As a material used for the oxide semiconductor film 106, a four-component metal oxide such as an In—Sn—Ga—Zn—O-based material; a three-component metal oxide such as an In—Ga—Zn—O-based material, an In—Sn—Zn—O-based material, an In—Al—Zn—O-based material, a Sn—Ga—Zn—O-based material, an Al—Ga—Zn—O-based material, or a Sn—Al—Zn—O-based material; a two-component metal oxide such as an In—Zn—O-based material, a Sn—Zn—O-based material, an Al—Zn—O-based material, a Zn—Mg—O-based material, a Sn—Mg—O-based material, an In—Mg—O-based material, or an In—Ga—O-based material; an In—O-based material; a Sn—O-based material; a Zn—O-based material; or the like may be used. In addition, any of the above materials may contain silicon oxide. Here, for example, an In—Ga—Zn—O-based material means an oxide including indium (In), gallium (Ga), and zinc (Zn), and there is no particular limitation on the composition ratio. Further, the In—Ga—Zn—O-based material may contain an element other than In, Ga, and Zn.

As the oxide semiconductor film 106, a thin film using a material represented by the chemical formula, InMO₃(ZnO), (m>0), may be formed. Here, M represents one or more metal elements selected from Ga, Al, Mn, and Co. For example, M may be Ga, Ga and Al, Ga and Mn, Ga and Co, or the like.

An alkali metal and an alkaline earth metal are adverse impurities for an oxide semiconductor and are preferably contained little. The concentration of Na is less than or equal to 5×10¹⁶ cm⁻³, preferably less than or equal to 1×10¹⁶ cm⁻³, more preferably less than or equal to 1×10¹⁵ cm³. The concentration of Li is less than or equal to 5×10¹⁵ cm³, preferably less than or equal to 1×10¹⁵ cm³. The concentration of K is less than or equal to 5×10¹⁵ cm³, preferably less than or equal to 1×10¹⁵ cm³. An alkali metal, in particular, sodium diffuses into an insulating film and becomes Na⁺ when an insulating film in contact with the oxide semiconductor is an oxide. In addition, sodium cuts the bond between a metal and oxygen or enters the bond in the oxide semiconductor. As a result, deterioration of transistor characteristics (e.g., the shift of a threshold voltage to the negative side (causing the transistor to be normally on) or a decrease in field-effect mobility) is caused. In addition, this also causes variation in the characteristics. Such a problem is significant especially in the case where the hydrogen concentration in the oxide semiconductor is extremely low. Therefore, the concentration of an alkali metal is strongly required to set to the above value in the case where the hydrogen concentration in the oxide semiconductor is less than or equal to 5×10¹⁹ cm⁻³, particularly less than or equal to 5×10¹⁸ cm⁻³.

In this embodiment, the oxide semiconductor film is formed by a sputtering method using an In—Ga—Zn—O-based oxide target.

As the In—Ga—Zn—O-based oxide target, for example, an oxide target having a composition ratio of In₂O₃:Ga₂O₃:ZnO=1:1:1 [molar ratio] can be used. Note that it is not necessary to limit the material and the composition ratio of the target to the above. For example, an oxide target having a composition ratio of In₂O₃:Ga₂O₃:ZnO=1:1:2 [molar ratio] can be used.

The relative density of the oxide target is greater than or equal to 90% and less than or equal to 100%, preferably greater than or equal to 95% and less than or equal to 99.9%. This is because, with the use of the oxide target with a high relative density, the formed oxide semiconductor film can be a dense film.

For example, the oxide semiconductor film can be formed as follows. However, the present invention is not limited to the following method.

An example of the film formation conditions is as follows: the distance between the substrate and the target is 60 mm; the pressure is 0.4 Pa; the direct-current (DC) power is 0.5 kW; and the film formation atmosphere is a mixed atmosphere containing argon and oxygen (the flow rate of the oxygen is 33%). Note that a pulse direct current (DC) sputtering method is preferably used because powder substances (also referred to as particles or dust) generated in film formation can be reduced and the film thickness can be uniform.

After the oxide semiconductor film 106 is formed over the substrate 100, as shown in a step S509 in FIG. 1, a gate valve between the transfer chamber 13 and the film formation chamber 10 a is opened, the substrate 100 is transferred to the transfer chamber 13 with the second transfer robot, and then the gate valve is closed.

After the substrate 100 is introduced into the transfer chamber 13, the gate valve between the transfer chamber 13 and the substrate processing chamber 15 in a vacuum state is opened, as shown in a step S510 in FIG. 1, the substrate 100 is transferred to the substrate processing chamber 15 with the second transfer robot, and then the gate valve is closed.

After the substrate 100 is introduced into the substrate processing chamber 15, the substrate 100 is subjected to heat treatment or plasma treatment. The oxide semiconductor film 106 can be dehydrated or dehydrogenated by the heat treatment or the plasma treatment. The heat treatment or the plasma treatment is performed at temperature higher than or equal to 150° C. and lower than the strain point of the substrate, preferably higher than or equal to 250° C. and lower than or equal to 470° C. in an oxidizing atmosphere, an inert atmosphere, a reduced-pressure atmosphere, or a dry air atmosphere. At this time, oxygen may be supplied to the oxide semiconductor film 106 from the base insulating film 102 while hydrogen is removed from the oxide semiconductor film 106. Note that the heat treatment is preferably performed at a temperature higher than the temperature of the heat treatment performed between the steps S507 and S508 in FIG. 1 by 5° C. or higher. By performing the heat treatment in such a temperature range, oxygen can be supplied from the base insulating film 102 to the oxide semiconductor film 106 efficiently.

Note that an oxidizing atmosphere refers to an atmosphere containing an oxidation gas. Oxidation gas is oxygen, ozone, nitrous oxide, or the like, and it is preferable that the oxidation gas does not contain water, hydrogen, and the like. For example, the purity of oxygen, ozone, or nitrous oxide to be introduced to a heat treatment apparatus is greater than or equal to 8N (99.999999%), preferably greater than or equal to 9N (99.9999999%). As the oxidation gas atmosphere, an atmosphere in which an oxidation gas is mixed with an inert gas may be used, and the oxidation gas is contained at least at 10 ppm in the atmosphere.

After the oxide semiconductor film 106 is subjected to dehydration treatment or dehydrogenation treatment, as shown in a step S511 in FIG. 1, the gate valve between the transfer chamber 13 and the substrate processing chamber 15 is opened, the substrate 100 is transferred to the transfer chamber 13 with the second transfer robot, and then the gate valve is closed.

After the substrate 100 is introduced into the transfer chamber 13, as shown in a step S512 in FIG. 1, a gate valve between the transfer chamber 13 and the film formation chamber 10 b in a vacuum state is opened, the substrate 100 is transferred to the film formation chamber 10 b with the second transfer robot, and then the gate valve is closed.

After the substrate 100 is introduced into the film formation chamber 10 b, an oxide conductive film 128 is formed over the oxide semiconductor film 106 to have a thickness of greater than or equal to 3 nm and less than or equal to 30 nm (see FIG. 2D). The oxide conductive film 128 is formed by a film formation method such as a sputtering method, a MBE method, a CVD method, a pulse laser deposition method, or an ALD method.

By the provision of the oxide conductive film between the oxide semiconductor film 106 and a source electrode 108 a formed later and between the oxide semiconductor film 106 and a drain electrode 108 b formed later, it is possible to reduce the contact resistance between a source region and the oxide semiconductor film 106 and between a drain region and the oxide semiconductor film 106, so that the transistor can operate at high speed.

As the oxide conductive film, indium oxide (In₂O₃), tin oxide (SnO₂), zinc oxide (ZnO), indium tin oxide (In₂O₃—SnO₂; abbreviated to ITO), indium zinc oxide (In₂O₃—ZnO), or any of these metal oxide materials in which silicon oxide is contained can be used.

Alternatively, the oxide conductive film may be formed by injection of nitrogen into the oxide semiconductor film 106. Alternatively, the oxide conductive film may be formed with the use of a material similar to that of the oxide semiconductor film 106 as a target by a sputtering method in which nitrogen is included in a film formation gas.

Note that all of the steps are not necessarily undergone in the path of the substrate shown in FIG. 1. For example, one or more of the steps S504, S510, and S512 in FIG. 1 may be omitted. In that case, following steps may be changed as appropriate.

The above steps are performed without exposure to the air.

Although not shown in the flow of FIG. 1, after the oxide conductive film 128 is formed, the substrate 100 is returned to the cassette port 14 in the substrate supply chamber 11 through the transfer chamber 13 and the load lock chamber 12 b.

Next, the following process of manufacturing the transistor is described with reference to FIGS. 4A to 4D.

In FIG. 2D, a resist mask is formed over the oxide conductive film 128 through a photolithography step, the oxide semiconductor film 106 and the oxide conductive film 128 are each processed to have an island shape, and then the resist mask is removed (see FIG. 4A).

Next, a conductive film covering the island-shaped oxide semiconductor film 106 and the island-shaped oxide conductive film 128 is formed to have a thickness of greater than or equal to 15 nm and less than or equal to 700 nm. A resist mask is formed through a photolithography step and the conductive film is processed to form the source electrode 108 a and the drain electrode 108 b. At the same time, the oxide conductive film 128 is processed, and the resist mask is removed (see FIG. 4B). Although not shown, when the oxide conductive film 128 is processed, part of the oxide semiconductor film 106 is etched in a region between the source electrode 108 a and the drain electrode 108 b in some cases. In that case, processing conditions are preferably set so that the oxide semiconductor film 106 is not removed in the region between the source electrode 108 a and the drain electrode 108 b.

As the conductive film serving as the source electrode 108 a and the drain electrode 108 b, for example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W or a metal nitride film containing any of the above elements as the main component (e.g., a titanium nitride film, a molybdenum nitride film, or a tungsten nitride film) can be used. A structure may be used in which a film of high-melting-point metal, such as Ti, Mo, or W, or a metal nitride film of any of these elements (e.g., a titanium nitride film, a molybdenum nitride film, or a tungsten nitride film) is stacked on one or both of a lower side and an upper side of a metal film of Al, Cu, or the like. Note that the conductive film serving as the source electrode 108 a and the drain electrode 108 b may be formed by using the multi-chamber film formation apparatus shown in FIG. 3.

The conductive film may be processed by etching with the use of a resist mask. Ultraviolet, a KrF laser light, an ArF laser light, or the like is preferably used for light exposure for forming a resist mask for the etching.

In the case where light exposure is performed so that the channel length L is less than 25 nm, the light exposure at the time of forming the resist mask is preferably performed using, for example, extreme ultraviolet having an extremely short wavelength of several nanometers to several tens of nanometers. In the light exposure by extreme ultraviolet light, the resolution is high and the focus depth is large. Thus, the channel length L of the transistor formed later can be reduced, whereby the operation speed of a circuit can be increased.

Etching may be performed with the use of a resist mask formed using a so-called multi-tone mask. A resist mask formed using a multi-tone mask has a plurality of thicknesses and can be further changed in shape by ashing; thus, such a resist mask can be used in a plurality of etching steps for different patterns. For this reason, a resist mask corresponding to at least two kinds of different patterns can be formed by using one multi-tone mask. That is, the steps can be simplified.

Next, a gate insulating film 112 part of which is in contact with the base insulating film 102, the oxide semiconductor film 106, and the oxide conductive film 128 and which covers the source electrode 108 a and the drain electrode 108 b is formed (see FIG. 4C).

Note that plasma treatment using an oxidation gas may be performed just before the formation of the gate insulating film 112 so that an exposed surface of the oxide semiconductor film 106 is oxidized and oxygen deficiency is filled. When performed, the plasma treatment preferably follows the formation of the gate insulating film 112 which is to be in contact with part of the oxide semiconductor film 106 without exposure to the air. The gate insulating film 112 may be formed by using the multi-chamber film formation apparatus shown in FIG. 3.

The gate insulating film 112 can have a structure similar to that of the base insulating film 102, and is preferably an insulating film from which oxygen is released by heating. At this time, a material having a high dielectric constant, such as yttrium oxide, zirconium oxide, hafnium oxide, or aluminum oxide may be used for the gate insulating film 112 in consideration of the function of the gate insulating film of the transistor. Alternatively, a stacked layer of silicon oxide, silicon oxynitride, or silicon nitride and a material having a high dielectric constant, such as yttrium oxide, zirconium oxide, hafnium oxide, or aluminum oxide, may be used in consideration of the gate withstand voltage and the condition of the interface between the oxide semiconductor film and the gate insulating film 112, or the like. The total thickness of the gate insulating film 112 is preferably greater than or equal to 1 nm and less than or equal to 300 nm, more preferably greater than or equal to 5 nm and less than or equal to 50 nm. As the thickness of the gate insulating film is larger, a short channel effect is enhanced more and the threshold voltage tends to easily shift in the negative direction. In addition, leakage due to a tunnel current is found to be increased with a thickness of the gate insulating film of less than or equal to 5 nm.

Next, a conductive film is formed. The conductive film is processed with the use of a resist mask formed through a photolithography step, so that a gate electrode 114 is formed, and then the resist mask is removed (see FIG. 4D). The gate electrode 114 can be formed using a metal material such as molybdenum, titanium, tantalum, tungsten, aluminum, copper, neodymium, or scandium, nitride of any of these metal materials, or an alloy material which contains any of these metal materials as its main component. Note that the gate electrode 114 may have a single-layer structure or a layered structure. When a material containing Al is used for the conductive film, the highest process temperature in the following steps is preferably lower than or equal to 380° C., more preferably lower than or equal to 350° C. When Cu is used for the conductive film, a metal material with a higher melting point than the melting point of Cu, such as Mo, Ti, or W, is preferably stacked in order to prevent defects caused by migration or diffusion of Cu elements. Further, when a material containing Cu is used for the conductive film, the highest process temperature in the following steps is preferably lower than or equal to 450° C. The conductive film serving as the gate electrode 114 may be formed by using the multi-chamber film formation apparatus shown in FIG. 3.

Note that the steps from the plasma treatment performed on the oxide semiconductor film 106 to the formation of the conductive film serving as the gate electrode 114 are preferably performed without exposure to the air. More preferably, the multi-chamber film formation apparatus shown in FIG. 3 is used. Without exposure to the air, hydrogen in the film and the interface between the films can be removed.

Through the above steps, the transistor 150 is manufactured.

FIGS. 5A to 5C show a top view and cross-sectional views of the transistor 150.

FIG. 5B is a cross sectional view along A-B of FIG. 5A. FIG. 5C is a cross-sectional view along C-D of FIG. 5A. Note that in FIG. 5A, some of the components of the transistor 150 (e.g., the gate insulating film 112) are omitted for brevity.

According to this embodiment, hydrogen in the film and the interface between the films can be removed, so that a transistor with less variation in the threshold voltage and stable electrical characteristics is provided. Further, hydrogen in a film in contact with an oxide semiconductor film can be reduced, whereby entry of hydrogen into the oxide semiconductor film can be suppressed. Thus, a semiconductor device having a transistor with favorable electrical characteristics and high reliability is provided.

Further, the number of apparatuses needed for manufacture of a transistor can be reduced with the use of a multi-chamber film formation apparatus.

Embodiment 2

In this embodiment, description is made on a method for manufacturing a bottom-gate top-contact transistor using an oxide semiconductor with less entry of hydrogen into a film and an interface between films.

FIG. 6 is a flow chart showing a path of a substrate in a multi-chamber film formation apparatus. FIGS. 7A to 7C are cross-sectional views corresponding to a manufacturing flow in FIG. 6. A multi-chamber film formation apparatus similar to that in Embodiment 1 is used.

First, as shown in a step S601 in FIG. 6, a substrate 200 is put on the cassette port 14 in the substrate supply chamber 11.

Next, as shown in a step S602 in FIG. 6, the gate valve of the load lock chamber 12 a set to an atmospheric pressure state is opened, the substrate 200 is transferred from the cassette port 14 to the load lock chamber 12 a with the first transfer robot, and then the gate valve is closed.

The load lock chamber 12 a is evacuated and set to a vacuum state after the substrate 200 is introduced into the load lock chamber 12 a. As shown in a step S603 in FIG. 6, the gate valve between the load lock chamber 12 a in the vacuum state and the transfer chamber 13 in a vacuum state is opened, the substrate 200 is transferred to the transfer chamber 13 with the second transfer robot, and then the gate valve is closed.

After the substrate 200 is introduced into the transfer chamber 13, as shown in a step S604 in FIG. 6, the gate valve between the transfer chamber 13 and the substrate processing chamber 15 in a vacuum state is opened, the substrate 200 is transferred to the substrate processing chamber 15 with the second transfer robot, and then the gate valve is closed.

After the substrate 200 is introduced into the substrate processing chamber 15, the substrate 200 is subjected to heat treatment or plasma treatment (see FIG. 7A). The heat treatment and the plasma treatment may be performed in a manner similar to the manners in Embodiment 1.

After the substrate 200 is subjected to dehydration treatment or dehydrogenation treatment, as shown in a step S605 in FIG. 6, the gate valve between the transfer chamber 13 and the substrate processing chamber 15 is opened, the substrate 200 is transferred to the transfer chamber 13 with the second transfer robot, and then the gate valve is closed.

After the substrate 200 is introduced into the transfer chamber 13, as shown in a step S606 in FIG. 6, the gate valve between the transfer chamber 13 and the film formation chamber 10 c in a vacuum state is opened, the substrate 200 is transferred to the film formation chamber 10 c with the second transfer robot, and then the gate valve is closed.

After the substrate 200 is introduced into the film formation chamber 10 c, a base insulating film 202 is formed over the substrate 200 (see FIG. 7B). The base insulating film 202 may have a structure similar to that of the base insulating film 102.

After the base insulating film 202 is formed over the substrate 200, as shown in a step S607 in FIG. 6, the gate valve between the transfer chamber 13 and the film formation chamber 10 c is opened, the substrate 200 is transferred to the transfer chamber 13 with the second transfer robot, and then the gate valve is closed.

After the substrate 200 is introduced into the transfer chamber 13, as shown in a step S608 in FIG. 6, the gate valve between the transfer chamber 13 and the film formation chamber 10 a in a vacuum state is opened, the substrate 200 is transferred to the film formation chamber 10 a with the second transfer robot, and then the gate valve is closed.

After the substrate 200 is introduced into the film formation chamber 10 a, a conductive film 213 is formed over the substrate 200 (see FIG. 7C). The conductive film 213 may have a structure similar to that of the conductive film serving as the gate electrode 114.

Note that all of the steps are not necessarily undergone in the path of the substrate shown in FIG. 6. For example, the step S604 in FIG. 6 may be omitted. In that case, following steps may be changed as appropriate.

The above steps are performed without exposure to the air.

Although not shown in the flow of FIG. 6, after the conductive film is formed, the substrate 200 is returned to the cassette port 14 in the substrate supply chamber 11 through the transfer chamber 13 and the load lock chamber 12 b.

Alternatively, after the base insulating film 202 is formed, the substrate 200 is transferred to the substrate processing chamber 15, the substrate 200 is subjected to plasma treatment or heat treatment, the substrate 200 is transferred to the film formation chamber 10 b through the transfer chamber 13, and then an insulating film may be formed. The insulating film may include a silicon nitride film, a silicon nitride oxide film, a gallium oxide film, a gallium aluminum oxide film, an aluminum oxide film, an aluminum oxynitride film, an aluminum nitride oxide film, or an aluminum nitride film. Then, the substrate 200 is transferred to the film formation chamber 10 a through the transfer chamber 13 and the conductive film 213 is formed. Note that the above steps are performed without exposure to the air. Thus, hydrogen in the film and the interface between the films can be further removed.

Next, a process of manufacturing the transistor following the steps in FIGS. 7A to 7C is described with reference to FIGS. 8A to 8E and FIGS. 9A to 9C.

First, a resist mask is formed over the conductive film 213 through a photolithography step, the conductive film 213 is processed, and a gate electrode 214 is formed (see FIG. 8A).

Next, a gate insulating film 212 part of which is in contact with the base insulating film 202 and which covers the gate electrode 214 is formed, and then an oxide semiconductor film 206 is formed over the gate insulating film 212 (see FIG. 8B). The gate insulating film 212 and the oxide semiconductor film 206 may have structures similar to those of the gate insulating film 112 and the oxide semiconductor film 106 respectively.

Next, the substrate 200 is subjected to heat treatment or plasma treatment. By subjecting the oxide semiconductor film 206 to the heat treatment or the plasma treatment, the oxide semiconductor film 206 can be dehydrated or dehydrogenated. The heat treatment or the plasma treatment is performed at a temperature higher than or equal to 150° C. and lower than the strain point of the substrate, preferably higher than or equal to 250° C. and lower than or equal to 470° C. in an oxidizing atmosphere, an inert atmosphere, a reduced-pressure atmosphere, or a dry air atmosphere. When an insulating film releasing oxygen is used as the gate insulating film 212, oxygen can be supplied from the gate insulating film 212 to the oxide semiconductor film 206 by the heat treatment.

An oxide conductive film 228 is formed over the oxide semiconductor film 206 (see FIG. 8C). The oxide conductive film 228 may have a structure similar to that of the oxide conductive film 128. Note that the oxide conductive film 228 is not necessarily provided.

Here, the steps from the formation of the gate insulating film 212 to the formation of the oxide conductive film 228 are preferably performed without exposure to the air. Hydrogen in the film and the interface between the films can be removed and the electrical characteristics and the reliability of a transistor can be improved. Note that the multi-chamber film formation apparatus shown in FIG. 3 can be used for the steps from the formation of the gate insulating film 212 to the formation of the oxide conductive film 228.

Next, a resist mask is formed over the oxide conductive film 228 through a photolithography step and the oxide conductive film 228 and the oxide semiconductor film 206 are each processed to have an island shape (see FIG. 8D).

Next, a conductive film covering the oxide conductive film 228, the oxide semiconductor film 206, and the gate insulating film 212 is formed, a resist mask is formed over the conductive film through a photolithography step, and the conductive film is processed to form a source electrode 208 a and a drain electrode 208 b. At the same time, part of the oxide conductive film 228 between the source electrode 208 a and the drain electrode 208 b is also processed, and the oxide conductive film 228 is provided so as to be in contact with a surface of the oxide semiconductor film 206 and be connected to part of the source and drain electrodes (see FIG. 8E). The source electrode 208 a and the drain electrode 208 b may have structures similar to those of the source electrode 108 a and the drain electrode 108 b.

Through the above steps, a bottom-gate top-contact transistor 250 can be manufactured.

Here, the source electrode 208 a, the drain electrode 208 b, the oxide conductive film 228, the oxide semiconductor film 206, and the gate insulating film 212 may be subjected to plasma treatment or heat treatment. For example, when a reverse sputtering treatment is performed, upper end portions of the source electrode 208 a and the drain electrode 208 b have curved surfaces, whereby field effect concentration at the time of operating the transistor can be relieved. Further, defects in the oxide semiconductor film 206 or in the vicinity of the surface of the oxide semiconductor film 206 are repaired by plasma treatment or heat treatment in an oxidizing atmosphere, so that oxygen deficiency can be reduced. The heat treatment may be performed at temperature higher than or equal to 200° C. and lower than or equal to 500° C.

Next, an interlayer insulating film 216 part of which is in contact with the oxide conductive film 228, the oxide semiconductor film 206, and the gate insulating film 212 and which covers the source electrode 208 a and the drain electrode 208 b is formed, and then a conductive film 222 is formed over the interlayer insulating film 216 (see FIG. 9A). Note that the interlayer insulating film 216 may have a structure similar to that of the base insulating film 202. For example, part of the interlayer insulating film 216 is preferably a silicon nitride film, a silicon nitride oxide film, a gallium oxide film, a gallium aluminum oxide film, an aluminum oxide film, an aluminum oxynitride film, an aluminum nitride oxide film, or an aluminum nitride film because hydrogen entering from the outside can be reduced. For the conductive film 222, a material similar to that of the gate electrode 214 or the oxide conductive film 228 may be used. Note that after the interlayer insulating film 216 is formed, heat treatment may be performed at a temperature higher than or equal to 250° C. and lower than or equal to 350° C. in an oxidizing atmosphere, an inert atmosphere, a reduced-pressure atmosphere, or a dry air atmosphere. In the case where an insulating film releasing oxygen is used as the interlayer insulating film 216, oxygen can be supplied from the interlayer insulating film 216 to the oxide semiconductor film 206 by performing the heat treatment. Further, oxygen deficiency at the interface between the oxide semiconductor film 206 and the interlayer insulating film 216 or in the vicinity of the oxide semiconductor film 206 and the interlayer insulating film 216 is reduced by supplied oxygen. In addition, when the part of the interlayer insulating film 216 is a silicon nitride film, a silicon nitride oxide film, a gallium oxide film, a gallium aluminum oxide film, an aluminum oxide film, an aluminum oxynitride film, an aluminum nitride oxide film, or an aluminum nitride film, outward diffusion of the supplied oxygen can be prevented. In other words, new oxygen deficiency is less likely to be generated in the oxide semiconductor film 206 and in the vicinity thereof; thus, the transistor with favorable electrical characteristics and high reliability can be manufactured.

Here, the steps from the plasma treatment or the heat treatment on the source electrode 208 a, the drain electrode 208 b, the oxide conductive film 228, the oxide semiconductor film 206, and the gate insulating film 212 to the formation of the conductive film 222 may be performed without exposure to the air. Hydrogen in the film and the interface between the films can be removed and the electrical characteristics and the reliability of the transistor can be improved. Note that the multi-chamber film formation apparatus shown in FIG. 3 may be used.

Next, a resist mask is formed over the conductive film 222 through a photolithography step, and the conductive film 222 is processed into a back gate electrode 224 (see FIG. 9B).

Through the above steps, a bottom-gate top-contact transistor 252 can be manufactured.

Next, a protective insulating film 226 covering the back gate electrode 224 and the interlayer insulating film 216 may be formed (see FIG. 9C). As the protective insulating film 226, a silicon nitride film, a silicon nitride oxide film, or an aluminum oxide film may be formed by a sputtering method or a CVD method. By the provision of the protective insulating film 226, entry of hydrogen from the outside into the transistor 252 can be suppressed.

According to this embodiment, hydrogen in the film and the interface between the films can be removed, so that a transistor with less variation in the threshold voltage and stable electrical characteristics is provided. Further, hydrogen in a film in contact with an oxide semiconductor film can be reduced, whereby entry of hydrogen into the oxide semiconductor film can be suppressed. Consequently, a semiconductor device having a transistor with favorable electrical characteristics and high reliability can be provided.

Further, the number of apparatuses needed for manufacture of a transistor can be reduced with the use of a multi-chamber film formation apparatus.

Embodiment 3

In this embodiment, description is made on a method for manufacturing a bottom-gate top-contact transistor using an oxide semiconductor with less entry of hydrogen into a film and an interface between films with reference to FIGS. 10A to 10E. The method is different from that in Embodiment 2. Note that steps up to and including those in the flow of FIG. 6 and FIGS. 7A to 7C are similar to those in Embodiment 2.

Manufacturing steps up to and including those in FIGS. 10A and 10B are similar to those in the manufacturing steps up to and including those in FIGS. 8A and 8B.

After the oxide semiconductor film 206 is formed, the substrate 200 is subjected to heat treatment or plasma treatment. By subjecting the oxide semiconductor film 206 to the heat treatment or the plasma treatment, the oxide semiconductor film 206 can be dehydrated or dehydrogenated. The heat treatment or the plasma treatment is performed at a temperature higher than or equal to 150° C. and lower than the strain point of the substrate, preferably higher than or equal to 250° C. and lower than or equal to 470° C. in an oxidizing atmosphere, an inert atmosphere, a reduced-pressure atmosphere, or a dry air atmosphere.

An oxide conductive film 328 and a conductive film 308 are formed over the oxide semiconductor film 206 (see FIG. 10C). The oxide conductive film 328 may have a structure similar to that of the oxide conductive film 128. Note that the oxide conductive film 328 is not necessarily provided. Further, the conductive film 308 is processed to form a source electrode 308 a and a drain electrode 308 b later. The conductive film 308 may have a structure similar to that of the conductive film serving as the source electrode 108 a and the drain electrode 108 b.

Here, the steps from the formation of the gate insulating film 212 to the formation of the conductive film 308 are preferably performed without exposure to the air. Note that the multi-chamber film formation apparatus shown in FIG. 3 can be used for the steps from the formation of the gate insulating film 212 to the formation of the conductive film 308.

Next, a resist mask is formed over the conductive film 308 through a photolithography step and the conductive film 328 and the oxide semiconductor film 206 are each processed to have an island shape (see FIG. 10D).

Next, a resist covering the conductive film 308, the oxide conductive film 328, the oxide semiconductor film 206, and the substrate 200 is applied, a resist mask is formed through a photolithography step, and the conductive film 308 and the oxide conductive film 328 are processed to form the source electrode 308 a and the drain electrode 308 b. At this time, the oxide conductive film 328 is formed between the source electrode 308 a and the oxide semiconductor film 206 and between the drain electrode 308 b and the oxide semiconductor film 206 (see FIG. 10E). Although not shown, part of the oxide semiconductor film 206 between the source electrode 308 a and the drain electrode 308 b may be etched.

Through the above steps, a bottom-gate top-contact transistor 350 can be manufactured.

Following the above steps, an interlayer insulating film, a back gate electrode, and a protective insulating film may be formed in a manner similar to that of the transistor 252. Note that the oxide semiconductor film 206 exposed before the formation of an interlayer insulating film may be subjected to heat treatment at a temperature higher than or equal to 200° C. and lower than or equal to 500° C. in an oxidizing atmosphere, an inert atmosphere, a reduced-pressure atmosphere, or a dry air atmosphere. Then, the interlayer insulating film is formed without exposure to the air.

According to this embodiment, the steps from the formation of the gate insulating film 212 to the formation of the conductive film 308 can be performed without exposure to the air, hydrogen in the film and the interface between the films can be removed, so that the electrical characteristics and the reliability of the transistor can be further improved than those in Embodiment 2.

Further, the number of apparatuses needed for manufacture of a transistor can be reduced with the use of a multi-chamber film formation apparatus.

Embodiment 4

In this embodiment, a method for forming an insulating film releasing oxygen is described with reference to FIGS. 2A to 2D and FIG. 18.

FIG. 18 shows a structure in which the film formation apparatus in FIG. 3 is provided with an ion implantation chamber 17.

In the ion implantation chamber 17, ion doping or ion implantation can be performed.

Note that, in this embodiment, film formation, ion implantation, and heat treatment or plasma treatment are performed successively in a vacuum state as much as possible. The method for forming an insulating film releasing oxygen by using the film formation apparatus in FIG. 18 is described below.

First, the substrate 100 is introduced into the load lock chamber 12 a. Next, the substrate 100 is transferred to the substrate processing chamber 15, and hydrogen adsorbed to the substrate 100 is removed through first heat treatment, plasma treatment, or the like in the substrate processing chamber 15. Here, the first heat treatment is performed at temperature higher than or equal to 100° C. and lower than the strain point of the substrate in an inert atmosphere, a reduced-pressure atmosphere, or a dry air atmosphere. Further, for the plasma treatment, rare gas, oxygen, nitrogen, or nitrogen oxide (e.g., nitrous oxide, nitrogen monoxide, or nitrous oxide) is used. Then, the substrate 100 is transferred to the film formation chamber 10 a and the base insulating film 102 is formed by a sputtering method to have a thickness greater than or equal to 50 nm and less than or equal to 500 nm, preferably greater than or equal to 200 nm and less than or equal to 400 nm (see FIG. 2B). Then, oxygen whose mass number is 16 (¹⁶O), oxygen whose mass number is 18 (¹⁸O), or ¹⁶O and ¹⁸O are implanted to the base insulating film 102 by an ion doping method or an ion implantation method. At this time, when an ion doping method is used, hydrogen is also implanted to the base insulating film 102. For this reason, an ion implantation method is preferably used. Then, after the substrate 100 is transferred to the substrate processing chamber 15, second heat treatment may be performed at temperature higher than or equal to 150° C. and lower than or equal to 280° C., preferably higher than or equal to 200° C. and lower than or equal to 250° C. in an inert atmosphere, a reduced-pressure atmosphere, or a dry air atmosphere. Through the second heat treatment, hydrogen can be removed from the substrate 100 and the base insulating film 102. Note that the second heat treatment is performed at temperature at which hydrogen is removed from the base insulating film 102 but as less oxygen as possible is released. Next, the substrate 100 is transferred to the film formation chamber 10 b and the oxide semiconductor film 106 is formed by a sputtering method (see FIG. 2C). Then, after the substrate 100 is transferred to the substrate processing chamber 15, third heat treatment may be performed at temperature greater than or equal to 250° C. and lower than or equal to 470° C. in an inert atmosphere, a reduced-pressure atmosphere, or a dry air atmosphere so that hydrogen is removed from the oxide semiconductor film while oxygen is supplied from the base insulating film 102 to the oxide semiconductor film. Note that the third heat treatment is performed at higher temperature than that of the second heat treatment by 5° C. or more. By use of the film formation apparatus in FIG. 18 in this manner, the manufacturing process can proceed with less entry of hydrogen during film formation.

Through the above, according to Embodiment 1 and the like, a semiconductor device using an oxide semiconductor with less variation in electrical characteristics can be provided. Further, a semiconductor device with high reliability can be provided.

The structures and methods described in this embodiment can be combined as appropriate with any of the structures and methods described in the other embodiments.

Embodiment 5

In this embodiment, a method for manufacturing a transistor which is used for a pixel in a liquid crystal display device and for which reduced number of photomasks and reduced number of photolithography steps are used is described with reference to FIG. 11, FIGS. 12A and 12B, and FIGS. 13A to 13F.

FIG. 11 shows a circuit configuration of a pixel 442. The pixel 442 includes a transistor 450, a liquid crystal element 446, and a capacitor 448. A gate electrode of the transistor 450 is electrically connected to a wiring 444 and one of a source electrode and a drain electrode of the transistor 450 is electrically connected to a wiring 440. The other of the source electrode and the drain electrode of the transistor 450 is electrically connected to one electrode of the liquid crystal element 446 and one electrode of the capacitor 448. The other electrode of the liquid crystal element 446 and the other electrode of the capacitor 448 are electrically connected to an electrode 445. The potential of the electrode 445 may be set to a fixed potential such as 0V, GND, or a common potential.

The transistor 450 has a function of selecting whether an image signal supplied from the wiring 440 is input to the liquid crystal element 446. When a signal for turning on the transistor 450 is supplied to the wiring 444, an image signal from the wiring 440 is supplied to the liquid crystal element 446 through the transistor 450. The light transmittance of the liquid crystal element 446 is controlled depending on a supplied image signal (potential). The capacitor 448 has a function of a storage capacitor (also referred to as a Cs capacitor) for storing a potential supplied to the liquid crystal element 446. The capacitor 448 is not necessarily provided. However, by provision of the capacitor 448, a change in the potential applied to the liquid crystal element 446 due to a current (off-state current) flowing between the source electrode and the drain electrode of the transistor 450 which is turned off can be suppressed.

An oxide semiconductor is used as a semiconductor where a channel of the transistor 450 is formed. In a transistor obtained by processing an oxide semiconductor with an energy gap of greater than or equal to 3.0 eV under appropriate conditions, the off-state current of the oxide semiconductor can be less than or equal to 100 zA (1×10⁻¹⁹ A/μm) or less than or equal to 10 zA (1×10⁻²⁰ A/μm), preferably less than or equal to 1 zA (1×10⁻²¹ A/μm) at operating temperature (e.g., 25° C.). For this reason, the potential applied to the liquid crystal element 446 can be stored without provision of the capacitor 448. Further, a liquid crystal display device with low power consumption can be provided.

Next, an example of a structure of the pixel 442 shown in FIG. 11 is described with reference to FIGS. 12A and 12B. FIG. 12A is a top view showing a plan structure of the pixel 442, and FIG. 12B is a cross-sectional view showing a stacked structure of the transistor 450. Note that A1-A2 in FIG. 12B corresponds to the cross section along line A1-A2 in FIG. 12A.

In the transistor 450 described in this embodiment, a drain electrode 408 b is partly surrounded by a source electrode 408 a having a U-shape (a C-shape, a reversed C-shape, or a horseshoe shape). With such a shape, even when the area of the transistor is small, a sufficient channel width can be secured, so that the on-state current of the transistor can be increased.

When a large amount of parasitic capacitance is generated between the gate electrode 414 and the drain electrode 408 b electrically connected to the pixel electrode 431, the liquid crystal element 446 is more likely to be affected by a feedthrough; therefore, a potential supplied to the liquid crystal element 446 cannot be accurately stored, which leads to deterioration in display quality. As described in this embodiment, by employing the shape in which the drain electrode 408 b is surrounded by the source electrode 408 a having a U-shape, a sufficient channel width can be secured and the parasitic capacitance generated between the drain electrode 408 b and the gate electrode 414 can be reduced, so that display quality of the liquid crystal display device can be improved.

In the cross section along A1-A2, a base insulating film 402 is formed over a substrate 400 and the gate electrode 414 is formed over the base insulating film 402. A gate insulating film 412 and an oxide semiconductor film 406 are formed over the gate electrode 414. The source electrode 408 a and the drain electrode 408 b are formed over the oxide semiconductor film 406. An interlayer insulating film 416 is formed over the source electrode 408 a and the drain electrode 408 b and in contact with part of the oxide semiconductor film 406. The pixel electrode 431 is formed over the interlayer insulating film 416. The pixel electrode 431 is electrically connected to the drain electrode 408 b through a contact hole 415 formed in the interlayer insulating film 416.

Further, parts of the gate insulating film 412, the oxide semiconductor film 406, and the interlayer insulating film 416 are removed and the pixel electrode 431 is formed in contact with side surfaces of the gate insulating film 412, the oxide semiconductor film 406, and the interlayer insulating film 416. In this embodiment, an i-type (intrinsic) or substantially i-type oxide semiconductor is used for the oxide semiconductor film 406. The i-type or substantially i-type oxide semiconductor can be regarded as substantially an insulator, so that when the pixel electrode 431 is in contact with an end portion of the oxide semiconductor film 406, a problem of leakage current or the like does not occur.

Next, a method for manufacturing the pixel portion of the liquid crystal display device described with reference to FIGS. 12A and 12B is described with reference to FIGS. 13A to 13F.

First, the base insulating film 402 is formed over the substrate 400. The substrate 400 and the base insulating film 402 may have structures similar to those of the substrate 100 and the base insulating film 102 respectively.

Next, a conductive film is formed over the base insulating film 402, a resist mask is formed through a photolithography step, and the conductive film is processed to form the gate electrode 414 (see FIG. 13A). Although not shown, a capacitor wiring 447 and the wiring 444 are formed at the same time. The gate electrode 414 may have a structure similar to that of the gate electrode 114.

A material of the conductive film may be similar to that of the gate electrode 114 shown in Embodiment 1.

Next, the gate insulating film 412 is formed over the gate electrode 414. The gate insulating film 412 may have a structure similar to that of the gate insulating film 112.

The gate insulating film 412 also functions as a protective layer. The gate electrode 414 including Cu is covered with an insulating film including silicon nitride, whereby diffusion of Cu from the gate electrode 414 can be prevented.

Next, the oxide semiconductor film 406 is formed over the gate insulating film 412. The oxide semiconductor film 406 may have a structure similar to that of the oxide semiconductor film 106.

After the formation of the oxide semiconductor film 406, the substrate 400 may be subjected to plasma treatment or heat treatment. By performing the plasma treatment or the heat treatment on the substrate 400, hydrogen in the oxide semiconductor film 406 can be reduced, which is preferable. The plasma treatment is preferably performed in an oxidizing atmosphere. The heat treatment is performed in an inert atmosphere, a reduced-pressure atmosphere, or an oxidizing atmosphere. The heat treatment temperature is set at higher than or equal to 100° C. and lower than or equal to 400° C., preferably higher than or equal to 200° C. and lower than or equal to 350° C., more preferably higher than or equal to 250° C. and lower than or equal to 300° C.

Next, a conductive film 408 is formed over the oxide semiconductor film 406 (see FIG. 13B). The conductive film 408 may have a structure similar to that of the conductive film serving as the source electrode 108 a and the drain electrode 108 b.

Here, the steps from the formation of the oxide semiconductor film 406 to the formation of the conductive film 408 are performed without exposure to the air. Without exposure to the air, hydrogen in the film and the interface between the films can be removed. Note that the steps from the formation of the oxide semiconductor film 406 to the formation of the conductive film 408 may be performed with the use of the multi-chamber film formation apparatus shown in FIG. 3.

Next, a resist mask is formed over the conductive film 408 through a photolithography step and the conductive film 408 is processed to form the source electrode 408 a and the drain electrode 408 b. Although not shown, the wiring 440 is formed at the same time (see FIG. 13C).

Next, the interlayer insulating film 416 is formed over the source electrode 408 a and the drain electrode 408 b (see FIG. 13D). The interlayer insulating film 416 may have a structure similar to that of the interlayer insulating film 216.

Then, a resist mask is formed over the interlayer insulating film 416 through a photolithography step and the interlayer insulating film 416, the oxide semiconductor film 406, and the gate insulating film 412 are processed. At this time, only part of the interlayer insulating film 416 is removed over the drain electrode 408 b, so that the contact hole 415 is formed (see FIG. 13E).

At this time, parts of the interlayer insulating film 416, the oxide semiconductor film 406, and the gate insulating film 412 in a pixel opening portion (a portion in a pixel where wirings or transistors are not provided) may be left. Note that by removing the parts of the interlayer insulating film 416 and the oxide semiconductor film 406 as much as possible, the transmittance of the pixel in the case where the liquid crystal display device is used as a transmissive liquid crystal display device is improved. Thus, light from a backlight is efficiently transmitted through the pixel, whereby power consumption can be reduced and display quality can be improved due to improvement in luminance, which is preferable.

Etching of the interlayer insulating film 416, the oxide semiconductor film 406, and the gate insulating film 412 may be performed by either dry etching or wet etching, or both. A gas containing chlorine (a chlorine-based gas such as chlorine (Cl₂), boron trichloride (BCl₃), silicon tetrachloride (SiCl₄), or carbon tetrachloride (CCl₄)) can be employed as an etching gas used for dry etching.

As a dry etching method, a parallel plate reactive ion etching (RIE) method, an inductively coupled plasma (ICP) etching method, or the like can be used.

In general, etching of a semiconductor film and formation of a contact hole in an insulating film are separately performed through different photolithography steps and etching steps. However, according to the manufacturing steps described in this embodiment, the etching of a semiconductor film and the formation of a contact hole can be performed at the same time through one photolithography step and one etching step. Consequently, not only the number of photo masks but also the number of photolithography steps can be reduced. In other words, because of the reduced number of photolithography steps, a liquid crystal display device can be manufactured at low cost with high productivity.

Further, according to the manufacturing steps described in this embodiment, a photoresist is not formed directly on the oxide semiconductor film. A channel formation region of the oxide semiconductor film 406 is protected by the interlayer insulating film 416, whereby moisture is not attached to the channel formation region of the oxide semiconductor film 406 in a peeling step of the photoresist; therefore, variation in the characteristics of the transistor 450 is reduced and the reliability is improved.

Next, a conductive film is formed over the interlayer insulating film 416, a resist mask is formed over the conductive film through a photolithography step, and the conductive film is processed to form the pixel electrode 431 (see FIG. 13F). The pixel electrode 431 can have a structure similar to that of the back gate electrode 224. Note that a back gate electrode may be formed by processing the conductive film. By provision of the back gate electrode, the threshold voltage of the transistor can be controlled.

The pixel electrode 431 is electrically connected to the drain electrode 408 b through the contact hole 415.

According to this embodiment, a pixel of a liquid crystal display device can be manufactured with a reduced number of photolithography steps compared to the number of photolithography steps in a conventional manufacturing method. Consequently, a liquid crystal display device can be manufactured at low cost with high productivity.

According to this embodiment, hydrogen in the film and the interface between the films can be removed, so that a transistor with less variation in the threshold voltage and stable electrical characteristics is provided. Further, hydrogen in a film in contact with an oxide semiconductor film can be reduced, whereby entry of hydrogen into the oxide semiconductor film can be suppressed. Thus, a semiconductor device having a transistor with favorable electrical characteristics and high reliability can be provided.

Further, the number of apparatuses needed for manufacture of a transistor can be reduced with the use of a multi-chamber film formation apparatus.

This embodiment can be freely combined with other embodiments.

Embodiment 6

In this embodiment, an example of a transistor capable of high-speed operation and having high reliability will be described with reference to FIG. 17.

FIG. 17 is a cross-sectional view of a bottom-gate bottom-contact transistor 550. The transistor 550 includes a substrate 500, a base insulating film 502 provided over the substrate 500, a gate electrode 514 provided over the base insulating film 502, a gate insulating film 512 covering the gate electrode 514, an oxide semiconductor film 506 provided over the gate electrode 514 with the gate insulating film 512 interposed therebetween, a source electrode 508 a and a drain electrode 508 b which are connected to the oxide semiconductor film 506 through an oxide conductive film 528, a wiring 518 connected to the source electrode 508 a and the drain electrode 508 b through a contact hole formed in the interlayer insulating film 516, a back gate electrode 524 provided over the same surface as the wiring 518 and facing the gate electrode 514 with the oxide semiconductor film 506 interposed therebetween, and a protective insulating film 526 covering the back gate electrode 524 and the wiring 518 and being partly in contact with the interlayer insulating film 516. Note that the oxide conductive film 528 and/or the base insulating film 502 are/is not necessarily included.

The substrate 500, the gate electrode 514, the gate insulating film 512, the oxide semiconductor film 506, the oxide conductive film 528, and the interlayer insulating film 516 may have structures similar to those of the substrate 200, the gate electrode 214, the gate insulating film 212, the oxide semiconductor film 206, the oxide conductive film 228, and the interlayer insulating film 216 respectively.

The source electrode 508 a and the drain electrode 508 b are formed of a Ti film, a W film, or the like to have a thickness of greater than or equal to 50 nm and less than or equal to 150 nm.

The back gate electrode 524 and the wiring 518 may have a layered structure in which an Al film is sandwiched between Ti films or a layered structure in which an Al film is sandwiched between Mo films. With such a structure, the resistance of the wiring 518 can be lowered and the operation speed of the transistor 550 can be improved.

Moreover, the thicknesses of the source electrode 508 a and the drain electrode 508 b can be reduced, whereby the coverage with the interlayer insulating film 516 in a step portion formed due to the source electrode 508 a and the drain electrode 508 b can be increased. For this reason, the reliability of the transistor can be improved.

Further, the protective insulating film 526 may include an aluminum oxide film, a silicon nitride film, or a silicon nitride oxide film. With such a structure, entry of hydrogen into the transistor 550 from the outside can be suppressed.

According to this embodiment, a transistor capable of high-speed operation and having high reliability can be manufactured.

Embodiment 7

One embodiment of a film formation method for an oxide semiconductor film that can be used for a semiconductor film of a transistor in Embodiments 1 to 6 will be described.

An oxide semiconductor film in this embodiment is a crystalline oxide semiconductor film.

First, a base insulating film is formed over a substrate.

Next, an oxide semiconductor film having a thickness greater than or equal to 1 nm and less than or equal to 50 nm, preferably greater than or equal to 5 nm and less than or equal to 30 nm is formed over the base insulating film. A sputtering method is used for the formation of the oxide semiconductor film. The substrate temperature during the film formation is higher than or equal to 100° C. and lower than or equal to 500° C., preferably higher than or equal to 200° C. and lower than or equal to 400° C., more preferably higher than or equal to 250° C. and lower than or equal to 300° C.

In this embodiment, the oxide semiconductor film is formed to have a thickness of 25 nm in an oxygen atmosphere, an argon atmosphere, or a mixed atmosphere of argon and oxygen in the conditions where a target for an oxide semiconductor (a target for an In—Ga—Zn—O-based oxide semiconductor containing In₂O₃, Ga₂O₃, and ZnO at 1:1:2 [molar ratio]) is used, the distance between the substrate and the target is 60 mm, the substrate temperature is 300° C., the pressure is 0.4 Pa, and the direct current (DC) power source is 0.5 kW.

Next, the atmosphere in the chamber in which the substrate is put is set to a nitrogen atmosphere or dry air, and heat treatment may be performed. The temperature of the heat treatment is higher than or equal to 200° C. and lower than or equal to 750° C., preferably higher than or equal to 250° C. and lower than or equal to 400° C. Crystallinity of the crystalline oxide semiconductor film can be improved by the heat treatment.

Here, the steps of the formation of the base insulating film, the formation of the crystalline semiconductor film, and the heat treatment on the substrate are preferably performed without exposure to the air with the use of the multi-chamber film formation apparatus shown in FIG. 3. Without exposure to the air, hydrogen in the film and the interface between the films can be removed.

Further, by the heat treatment, oxygen in the base insulating film is diffused into an interface between the base insulating film and the crystalline oxide semiconductor film or the vicinity of the interface (within ±5 nm from the interface), so that oxygen deficiency in the crystalline oxide semiconductor film and the interface state between the base insulating film and the crystalline oxide semiconductor film can be reduced.

Note that the crystalline oxide semiconductor film comprises an oxide including a crystal with c-axis alignment (also referred to as C-Axis Aligned Crystal (CAAC)), which has neither a single crystal structure nor an amorphous structure. Note that the crystalline oxide semiconductor film partly includes a crystal grain boundary.

In particular, in the transistor in Embodiment 1 in which the oxide semiconductor of this embodiment is used as an oxide semiconductor film, an electric field is not applied from one surface to the other surface of the oxide semiconductor film and current does not flow in the thickness direction of the oxide semiconductor. For this reason, the transistor has a structure in which current mainly flows along the interface of the stack of the oxide semiconductor; therefore, even when the transistor is irradiated with light or even when a bias-temperature (BT) stress is applied to the transistor, deterioration of electrical characteristics is suppressed or reduced.

When a crystalline oxide semiconductor film is used for a transistor, the transistor can have stable electrical characteristics and high reliability.

This embodiment can be implemented in appropriate combination with the structures described in the other embodiments.

Embodiment 8

One embodiment of a film formation method for an oxide semiconductor film that can be used for a semiconductor film of a transistor in Embodiments 1 to 6 will be described using FIGS. 14A to 14C.

The oxide semiconductor film of this embodiment has a layered structure including a first crystalline oxide semiconductor film and a second crystalline oxide semiconductor film thereover which is thicker than the first crystalline oxide semiconductor film.

First, a base insulating film 602 is formed over a substrate 600.

Next, a first oxide semiconductor film having a thickness greater than or equal to 1 nm and less than or equal to 10 nm is formed over the base insulating film 602. A sputtering method is used for the formation of the first oxide semiconductor film. The substrate temperature during the film formation is higher than or equal to 100° C. and lower than or equal to 500° C., preferably higher than or equal to 200° C. and lower than or equal to 400° C., more preferably higher than or equal to 250° C. and lower than or equal to 300° C.

In this embodiment, the first oxide semiconductor film having a thickness of 5 nm is formed using a target for an oxide semiconductor (a target for an In—Ga—Zn—O-based oxide semiconductor containing In₂O₃, Ga₂O₃, and ZnO at 1:1:2 [molar ratio]), with a distance between the substrate and the target of 60 mm, a substrate temperature of 300° C., a pressure of 0.4 Pa, and a direct current (DC) power source of 0.5 kW in an atmosphere of only oxygen, only argon, or argon and oxygen.

Next, the atmosphere in the chamber in which the substrate is put is set to a nitrogen atmosphere or dry air, and first crystallization heat treatment is performed. The temperature of the first crystallization heat treatment is higher than or equal to 400° C. and lower than or equal to 750° C. A first crystalline oxide semiconductor film 606 a is formed by the first crystallization heat treatment (see FIG. 14A).

Depending on the temperature of the first crystallization heat treatment, the first crystallization heat treatment causes crystallization from a film surface and crystal growth from the film surface toward the inside of the film; thus, c-axis aligned crystal is obtained. By the first crystallization heat treatment, the proportions of zinc and oxygen in the film surface are increased, and one or more layers of graphene-type two-dimensional crystal including zinc and oxygen and having a hexagonal upper plane are formed at the outermost surface; the layers grow in the thickness direction to overlap with each other. By an increase in the temperature of the crystallization heat treatment, the crystal growth proceeds from the surface to the inside and further from the inside to the bottom.

By the first crystallization heat treatment, oxygen in the base insulating film 602 is diffused into an interface between the base insulating film 602 and the first crystalline oxide semiconductor film 606 a or the vicinity of the interface (within ±5 nm from the interface), so that oxygen deficiency in the first crystalline oxide semiconductor film 606 a and the interface state between the base insulating film 602 and the first crystalline oxide semiconductor film 606 a can be reduced.

Next, a second oxide semiconductor film having a thickness greater than 10 nm is formed over the first crystalline oxide semiconductor film 606 a. In formation of the second crystalline oxide semiconductor film, a sputtering method is used, and a substrate temperature is higher than or equal to 100° C. and lower than or equal to 500° C., preferably higher than or equal to 200° C. and lower than or equal to 400° C., more preferably higher than or equal to 250° C. and lower than or equal to 300° C. With a substrate temperature higher than or equal to 100° C. and lower than or equal to 500° C. in the film formation, precursors can be arranged in the oxide semiconductor film formed over and in contact with the surface of the first crystalline oxide semiconductor film and so-called orderliness can be obtained.

In this embodiment, the second oxide semiconductor film is formed to have a thickness of 25 nm in an oxygen atmosphere, an argon atmosphere, or a mixed atmosphere of argon and oxygen in the conditions where a target for an oxide semiconductor (a target for an In—Ga—Zn—O-based oxide semiconductor containing In₂O₃, Ga₂O₃, and ZnO at 1:1:2 [molar ratio]) is used, the distance between the substrate and the target is 60 mm, the substrate temperature is 400° C., the pressure is 0.4 Pa, and the direct current (DC) power source is 0.5 kW.

Then, second crystallization heat treatment is performed. The temperature of the second crystallization heat treatment is higher than or equal to 400° C. and lower than or equal to 750° C. A second crystalline oxide semiconductor film 606 b is formed by the second crystallization heat treatment (see FIG. 14B). Here, the second crystalline heat treatment is preferably performed in a nitrogen atmosphere, an oxygen atmosphere, or a mixed atmosphere of argon and oxygen so that the density of the second crystalline oxide semiconductor film can be increased and the number of defects therein can be reduced. By the second crystallization heat treatment, crystal growth proceeds in the thickness direction with the use of the first crystalline oxide semiconductor film 606 a as a nucleus, that is, crystal growth proceeds from the bottom to the inside; thus, the second crystalline oxide semiconductor film 606 b is formed.

It is preferable that the steps from the formation of the base insulating film 602 to the second crystalline heat treatment be performed successively without exposure to the air. For example, the multi-chamber film formation apparatus shown in FIG. 3 may be used. The atmospheres of the film formation chambers 10 a, 10 b, and 10 c, the transfer chamber 13, and the substrate processing chamber 15 are preferably controlled so as to hardly contain hydrogen and moisture (i.e., as an inert atmosphere, a reduced-pressure atmosphere, or a dry air atmosphere). For example, a preferable atmosphere is a dry nitrogen atmosphere in which the dew point of moisture is lower than or equal to −40° C., preferably lower than or equal to −50° C. An example of a procedure of the manufacturing steps with use of the film formation apparatus shown in FIG. 3 is as follows. The substrate 600 is first transferred from the substrate supply chamber 11 to the substrate processing chamber 15 through the load lock chamber 12 a and the transfer chamber 13; hydrogen adhering to the substrate 600 is removed by vacuum baking or the like in the substrate processing chamber 15; the substrate 600 is then transferred to the film formation chamber 10 c through the transfer chamber 13; and the base insulating film 602 is formed in the film formation chamber 10 c. Then, the substrate 600 is transferred to the film formation chamber 10 a through the transfer chamber 13 without exposure to the air, and the first oxide semiconductor film having a thickness of 5 nm is formed in the film formation chamber 10 a. Then, the substrate 600 is transferred to the substrate processing chamber 15 though the transfer chamber 13 without exposure to the air and first crystallization heat treatment is performed. Then, the substrate 600 is transferred to the film formation chamber 10 a through the transfer chamber 13, and the second oxide semiconductor film having a thickness greater than 10 nm is formed in the film formation chamber 10 a. Then, the substrate 600 is transferred to the substrate processing chamber 15 through the transfer chamber 13, and second crystallization heat treatment is performed. As described above, with use of the film formation apparatus shown in FIG. 3, a manufacturing process can proceed without exposure to the air. Further, after a stack of the base insulating film 602, the first crystalline oxide semiconductor film, and the second crystalline oxide semiconductor film is formed, in the film formation chamber 10 b, a conductive film for forming a source electrode and a drain electrode can be formed over the second crystalline oxide semiconductor film with use of a metal target, without exposure to the air. Note that the first crystalline oxide semiconductor film and the second crystalline oxide semiconductor film may be formed in separate film formation chambers for improvement of the throughput.

Next, a stack of oxide semiconductor films including the first crystalline oxide semiconductor film 606 a and the second crystalline oxide semiconductor film 606 b is processed to form an oxide semiconductor film 606 including the island-shaped stack of the oxide semiconductor films (see FIG. 14C). In the drawings, the interface between the first crystalline oxide semiconductor film 606 a and the second crystalline oxide semiconductor film 606 b is indicated by a dashed line for description of the stack of the oxide semiconductor films; however, the interface is actually not distinct and is shown for easy understanding.

The stack of the oxide semiconductor films can be processed by being etched after a mask having a desired shape is formed over the stack of the oxide semiconductor films. The mask may be formed by a method such as photolithography or an ink jet method.

Further, one feature of the first crystalline oxide semiconductor film and the second crystalline oxide semiconductor film obtained by the above formation method is that they have c-axis alignment. However, the first crystalline oxide semiconductor film and the second crystalline oxide semiconductor film comprise CAAC. Note that the first crystalline oxide semiconductor film and the second crystalline oxide semiconductor film partly include a crystal grain boundary.

Note that the first crystalline oxide semiconductor film and the second crystalline oxide semiconductor film are each formed using an oxide material including at least Zn. For example, a four-component metal oxide such as an In—Al—Ga—Zn—O-based material or an In—Sn—Ga—Zn—O-based material; a three-component metal oxide such as an In—Ga—Zn—O-based material, an In—Al—Zn—O-based material, an In—Sn—Zn—O-based material, a Sn—Ga—Zn—O-based material, an Al—Ga—Zn—O-based material, or a Sn—Al—Zn—O-based material; a two-component metal oxide such as an In—Zn—O-based material, a Sn—Zn—O-based material, an Al—Zn—O-based material, or a Zn—Mg—O-based material; a Zn—O-based material; or the like can be used. Further, an In—Si—Ga—Zn—O-based material, an In—Ga—B—Zn—O-based material, or an In—B—Zn—O-based material may be used. In addition, the above materials may contain SiO₂. Here, for example, an In—Ga—Zn—O-based material means an oxide material including indium (In), gallium (Ga), and zinc (Zn), and there is no particular limitation on the composition ratio. Further, the In—Ga—Zn—O-based material may contain an element other than In, Ga, and Zn.

Without limitation to the two-layer structure in which the second crystalline oxide semiconductor film is formed over the first crystalline oxide semiconductor film, a stack structure of three or more layers may be formed by repeatedly performing a process of film formation and crystallization heat treatment for forming a third crystalline oxide semiconductor film after the second crystalline oxide semiconductor film is formed.

The oxide semiconductor film 606 formed of the stack of the oxide semiconductor films formed by the above manufacturing method can be used as appropriate for a transistor which can be applied to the semiconductor device disclosed in this specification (e.g., the transistors 150, 250, 252, 350, and 450).

In the transistor 150 according to Embodiment 1, in which the stack of the oxide semiconductor films of this embodiment is used as the oxide semiconductor film 606, an electric field is not applied from one surface to the other surface of the oxide semiconductor film and current does not flow in the thickness direction (from one surface to the other surface; specifically, in the vertical direction in FIG. 4B) of the stack of the oxide semiconductor films. The transistor has a structure in which current mainly flows along the interface of the stack of the oxide semiconductor films; therefore, even when the transistor is irradiated with light or even when a bias-temperature (BT) stress is applied to the transistor, deterioration of electrical characteristics is suppressed or reduced.

By using a stack of a first crystalline oxide semiconductor film and a second crystalline oxide semiconductor film, like the oxide semiconductor film 606, a transistor having stable electrical characteristics and high reliability can be realized.

This embodiment can be implemented in appropriate combination with the structures described in the other embodiments.

Further, the number of apparatuses needed for manufacture of a transistor can be reduced with the use of a multi-chamber film formation apparatus.

Embodiment 9

One mode of a display device using the transistor exemplified in Embodiments 1 to 6 is shown in FIGS. 15A and 15B.

FIG. 15A is a top view of a panel. In the panel, a transistor 750 and a liquid crystal element 713, which are formed over a first substrate 701, are sealed between the first substrate 701 and a second substrate 706 by a sealant 705. FIG. 15B corresponds to a cross sectional view along M-N in FIG. 15A.

The sealant 705 is provided so as to surround a pixel portion 702 provided over the first substrate 701. The second substrate 706 is provided over the pixel portion 702. Thus, the pixel portion 702 is sealed together with a liquid crystal layer 708 by the first substrate 701, the sealant 705, and the second substrate 706.

Further, an input terminal 720 is provided in a region that is different from a region surrounded by the sealant 705 over the first substrate 701 and is connected to flexible printed circuits (FPCs) 718 a and 718 b. The FPC 718 a is electrically connected to a signal line driver circuit 703 separately manufactured over a different substrate and the FPC 718 b is electrically connected to a scan line driver circuit 704 separately manufactured over a different substrate. Various signals and potentials supplied to the pixel portion 702 are supplied from the signal line driver circuit 703 and the scan line driver circuit 704 through the FPCs 718 a and 718 b.

Note that a connection method of a driver circuit which is separately formed over a different substrate is not particularly limited, and a chip on glass (COG) method, a wire bonding method, a tape carrier package (TCP) method, a tape automated bonding (TAB) method, or the like can be used.

As the display element provided in the display device, a liquid crystal element (also referred to as a liquid crystal display element) can be used. Furthermore, a display medium whose contrast is changed by an electric effect, such as electronic ink, can be used.

The display device shown in FIG. 15B includes an electrode 715 and a wiring 716. The electrode 715 and the wiring 716 are electrically connected to a terminal included in a FPC 718 a through an anisotropic conductive film 719.

The electrode 715 is formed using the same conductive film as the first electrode 730. The wiring 716 is formed using the same conductive film as a source electrode and a drain electrode of the transistor 750.

Note that in this embodiment, the transistor 750 has a structure similar to that of the transistor 450 described in Embodiment 4; however, it is needless to say that the structure of the transistor is not limited thereto. The transistor may be replaced with the transistor manufactured in any of Embodiments 1 to 6 as appropriate. The transistor 750 provided in the pixel portion 702 is electrically connected to a display element to form a display panel. There is no particular limitation on the kind of display element as long as display can be performed, and a variety of kinds of display elements can be employed.

FIGS. 15A and 15B show an example of a liquid crystal display device using a liquid crystal element as a display element. In FIGS. 15A and 15B, the liquid crystal element 713 is a display element including the first electrode 730, a second electrode 731, and the liquid crystal layer 708. Note that insulating films 732 and 733 serving as alignment films are provided so that the liquid crystal layer 708 is interposed therebetween. The second electrode 731 is provided on the second substrate 706 side, and the first electrode 730 and the second electrode 731 are stacked with the liquid crystal layer 708 provided therebetween.

Further, a reference numeral 735 is a columnar spacer formed of an insulating film over the second substrate 706 in order to control the thickness (a cell gap) of the liquid crystal layer 708. Alternatively, a spherical spacer may be used.

In the case where a liquid crystal element is used as the display element, a thermotropic liquid crystal, a low-molecular liquid crystal, a high-molecular liquid crystal, a polymer dispersed liquid crystal, a ferroelectric liquid crystal, an anti-ferroelectric liquid crystal, or the like can be used. Such a liquid crystal material exhibits a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, or the like depending on conditions.

Alternatively, liquid crystal exhibiting a blue phase for which an alignment film is unnecessary may be used. A blue phase is one of liquid crystal phases, which is generated just before a cholesteric phase changes into an isotropic phase while temperature of cholesteric liquid crystal is increased. Since the blue phase appears only in a narrow temperature range, a liquid crystal composition in which a chiral material is mixed is used for the liquid crystal layer in order to improve the temperature range. The liquid crystal composition which includes a liquid crystal showing a blue phase and a chiral agent has a small response time of 1 msec or less, has optical isotropy, which makes the alignment process unneeded, and has a small viewing angle dependence. In addition, since an alignment film does not need to be provided and rubbing treatment is unnecessary, electrostatic discharge damage caused by the rubbing treatment can be prevented and defects and damage of the liquid crystal display device can be reduced in the manufacturing process. Thus, productivity of the liquid crystal display device can be improved.

The specific resistivity of the liquid crystal material is greater than or equal to 1×10⁹ Ω·cm, preferably greater than or equal to 1×10¹¹ Ω·cm, more preferably greater than or equal to 1×10¹² Ω·cm. The value of the specific resistivity in this specification is measured at 20° C.

The size of storage capacitor formed in the liquid crystal display device is set considering the leakage current of the transistor provided in the pixel portion or the like so that charge can be held for a predetermined period. By using a transistor including an oxide semiconductor for a semiconductor film in which a channel region is formed, it is enough to provide a storage capacitor having a capacitance that is ⅓ or less, preferably ⅕ or less of a liquid crystal capacitance of each pixel.

The current in an off state (the off-state current) of the transistor using an oxide semiconductor film used in this embodiment can be made small. Consequently, an electrical signal such as an image signal can be held for a longer period in the pixel, and a writing interval can be set longer in an on state. Consequently, frequency of refresh operation can be reduced, which leads to an effect of suppressing power consumption. Further, the transistor using an oxide semiconductor film can store a potential applied to a liquid crystal element without a storage capacitor.

The field-effect mobility of the transistor using an oxide semiconductor film used in this embodiment can be relatively high, whereby high-speed operation is possible. Therefore, by using the transistor in a pixel portion of a liquid crystal display device, a high-quality image can be provided. In addition, since the transistors can be separately provided in a driver circuit portion and a pixel portion over one substrate, the number of components of the liquid crystal display device can be reduced.

For the liquid crystal display device, a twisted nematic (TN) mode, an in-plane-switching (IPS) mode, a fringe field switching (FFS) mode, an axially symmetric aligned micro-cell (ASM) mode, an optical compensated birefringence (OCB) mode, a ferroelectric liquid crystal (FLC) mode, an antiferroelectric liquid crystal (AFLC) mode, or the like can be used.

A normally black liquid crystal display device such as a transmissive liquid crystal display device utilizing a vertical alignment (VA) mode is preferable. The vertical alignment mode is a method of controlling alignment of liquid crystal molecules of a liquid crystal display panel, in which liquid crystal molecules are aligned vertically to a panel surface when no voltage is applied. Some examples are given as the vertical alignment mode. For example, a multi-domain vertical alignment (MVA) mode, a patterned vertical alignment (PVA) mode, an advanced super-view (ASV) mode, and the like can be used. Moreover, it is possible to use a method called domain multiplication or multi-domain design, in which a pixel is divided into some regions (subpixels) and molecules are aligned in different directions in their respective regions.

In the liquid crystal display device, a black matrix (a light-blocking layer), an optical element (an optical substrate) such as a polarizing element, a retardation element, or an anti-reflection element, and the like are provided as appropriate. For example, circular polarization may be employed by using a polarizing substrate and a retardation substrate. In addition, a backlight, a side light, or the like may be used as a light source.

In addition, it is possible to employ a time-division display method (also called a field-sequential driving method) with the use of a plurality of light-emitting diodes (LEDs) as a backlight. By employing a field-sequential driving method, color display can be performed without using a color filter.

As a display method in the pixel portion, a progressive method, an interlace method, or the like can be employed. Further, color elements controlled in a pixel at the time of color display are not limited to three colors: R, G, and B (R, G, and B correspond to red, green, and blue respectively). For example, R, G, B, and W (W corresponds to white), or R, G, B, and one or more of yellow, cyan, magenta, and the like can be used. Further, the sizes of display regions may be different between respective dots of color elements. However, one embodiment of the present invention is not limited to a color liquid crystal display device and can be applied to a monochrome liquid crystal display device.

In FIGS. 15A and 15B, as the first substrate 701 and the second substrate 706, flexible substrates, for example, plastic substrates having a light-transmitting property or the like can be used, as well as glass substrates. As plastic, a fiberglass-reinforced plastics (FRP) plate, a polyvinyl fluoride (PVF) film, a polyester film, or an acrylic resin film can be used. Further, a sheet with a structure in which an aluminum foil is sandwiched between PVF films or polyester films can be used.

The liquid crystal display device performs display by transmitting light from a light source or a display element. Therefore, the substrate and the thin films such as the insulating film and the conductive film provided for the pixel portion where light is transmitted have light-transmitting properties with respect to light in the visible-light wavelength range.

The first electrode and the second electrode (each of which may be called a pixel electrode, a common electrode, a counter electrode, or the like) for applying voltage to the display element may have light-transmitting properties or light-reflecting properties, which depends on the direction in which light is extracted, the position where the electrode is provided, and the pattern structure of the electrode.

The first electrode 730 and the second electrode 731 can be formed using a light-transmitting conductive material such as indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, ITO, indium zinc oxide, or indium tin oxide to which silicon oxide is added. Further, a material formed of 1 to 10 graphene sheets may be used.

One of the first electrode 730 and the second electrode 731 can be formed of one or more kinds of materials selected from metals such as tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni), titanium (Ti), platinum (Pt), aluminum (Al), copper (Cu), and silver (Ag); alloys of these metals; and nitrides of these metals.

The first electrode 730 and the second electrode 731 can be formed using a conductive composition including a conductive macromolecule (also referred to as a conductive polymer). As the conductive macromolecule, a so-called π-electron conjugated conductive can be used. For example, polyaniline or a derivative thereof, polypyrrole or a derivative thereof, polythiophene or a derivative thereof, and a copolymer of two or more of aniline, pyrrole, and thiophene or a derivative thereof can be given.

Since a transistor is easily broken by static electricity or the like, a protection circuit is preferably provided. The protection circuit is preferably formed using a nonlinear element.

As described above, by using any of the transistors exemplified in Embodiments 1 to 7, a highly reliable liquid crystal display device can be provided. Note that the transistors described in Embodiments 1 to 7 can be applied to not only semiconductor devices having the display functions described above but also semiconductor devices having a variety of functions, such as a power device which is mounted on a power supply circuit, a semiconductor integrated circuit such as LSI, and a semiconductor device having an image sensor function of reading information of an object.

This embodiment can be freely combined with other embodiments.

Embodiment 10

A semiconductor device which is one embodiment of the present invention can be applied to a variety of electronic devices (including game machines). Examples of electronic devices are a television set (also referred to as a television or a television receiver), a monitor of a computer or the like, a camera such as a digital camera or a digital video camera, a digital photo frame, a mobile phone handset (also referred to as a mobile phone or a mobile phone device), a portable game machine, a portable information terminal, an audio reproducing device, a large-sized game machine such as a pachinko machine, and the like. Examples of electronic devices each including the semiconductor device described in the above embodiment will be described.

FIG. 16A shows a laptop personal computer including a main body 801, a housing 802, a display portion 803, a keyboard 804, and the like. By applying the semiconductor device described in Embodiments 1 to 8, the laptop personal computer can have high reliability.

FIG. 16B shows a portable information terminal (PDA) which includes a display portion 813, an external interface 815, an operation button 814, and the like in a main body 811. A stylus 812 is included as an accessory for operation. By applying the semiconductor device described in Embodiments 1 to 8, the portable information terminal (PDA) can have higher reliability.

FIG. 16C shows an example of an e-book reader. For example, the e-book reader 820 includes two housings, a housing 821 and a housing 822. The housings 821 and 822 are bound with each other by an axis portion 825, along which the e-book reader 820 can be opened and closed. With such a structure, the e-book reader 820 can operate like a paper book.

A display portion 823 and a display portion 824 are incorporated in the housing 821 and the housing 822 respectively. The display portion 823 and the display portion 824 may display one image or different images. In the structure where the display portions display different images from each other, for example, the right display portion (the display portion 823 in FIG. 16C) can display text and the left display portion (the display portion 824 in FIG. 16C) can display images. By applying the semiconductor device described in Embodiments 1 to 8 can be, the e-book reader 820 can have high reliability.

Further, in FIG. 16C, the housing 821 is provided with an operation portion and the like. For example, the housing 821 is provided with a power switch 826, operation keys 827, a speaker 828, and the like. With the operation keys 827, pages can be turned. Note that a keyboard, a pointing device, or the like may also be provided on the surface of the housing, on which the display portion is provided. Furthermore, an external connection terminal (an earphone terminal, a USB terminal, or the like), a recording medium insertion portion, and the like may be provided on the back surface or the side surface of the housing. Further, the e-book reader 820 may have a function of an electronic dictionary.

The e-book reader 820 may send and receive information wirelessly. Through wireless communication, desired book data or the like can be purchased and downloaded from an electronic book server.

FIG. 16D shows a mobile phone, which includes two housings, a housing 830 and a housing 831. The housing 831 includes a display panel 832, a speaker 833, a microphone 834, a pointing device 836, a camera lens 837, an external connection terminal 838, and the like. The housing 830 includes a solar cell 840 for charging of the portable phone, an external memory slot 841, and the like. In addition, an antenna is incorporated in the housing 831. By applying the semiconductor device described in Embodiments 1 to 8, the mobile phone can have high reliability.

Further, the display panel 832 is provided with a touch panel. A plurality of operation keys 835 that are displayed as images are shown by dashed lines in FIG. 16D. A boosting circuit by which a voltage output from the solar cell 840 is increased to be sufficiently high for each circuit is also provided.

The display panel 832 changes the orientation of display as appropriate depending on the application mode. Further, the camera lens 837 is provided on the same surface as the display panel 832, and thus it can be used as a video phone. The speaker 833 and the microphone 834 can be used for operations such as video calls, sound recording, and playback without being limited to the voice call function. Further, the housing 830 and the housing 831 in a state where they are developed as shown in FIG. 16D can shift by sliding so that one is lapped over the other; therefore, the size of the mobile phone can be reduced, which makes the mobile phone suitable for being carried.

The external connection terminal 838 can be connected to an AC adapter and various types of cables such as a USB cable, and charging and data communication with a personal computer are possible. Furthermore, a large amount of data can be stored and transferred by inserting a recording medium into the external memory slot 841.

Further, in addition to the above functions, an infrared communication function, a television reception function, or the like may be provided.

FIG. 16E shows a digital video camera, which includes a main body 851, a display portion (A) 857, an eyepiece 853, an operation switch 854, a display portion (B) 855, a battery 856, and the like. By applying the semiconductor device described in Embodiments 1 to 8, the digital video camera can have high reliability.

FIG. 16F shows an example of a television set. In the television set 860, a display portion 863 is incorporated in a housing 861. The display portion 863 can display images. Here, the housing 861 is supported by a stand 865. By applying the semiconductor device described in Embodiments 1 to 8, the television set 860 can have high reliability.

The television set 860 can be operated by an operation switch of the housing 861 or a separate remote controller. Further, the remote controller may be provided with a display portion for displaying data output from the remote controller.

Note that the television set 860 is provided with a receiver, a modem, and the like. Moreover, when the display device is connected to a communication network with or without wires via the modem, one-way (from a sender to a receiver) or two-way (between a sender and a receiver or between receivers) information communication can be performed.

The structures, the methods, and the like described in this embodiment may be combined as appropriate with any of the structures, the methods, and the like described in the other embodiments.

EXPLANATION OF REFERENCE

10 a: film formation chamber, 10 b: film formation chamber, 10 c: film formation chamber, 11: substrate supply chamber, 12 a: load lock chamber, 12 b: load lock chamber, 13: transfer chamber, 14: cassette port, 15: substrate processing chamber, 100: substrate, 102: base insulating film, 106: oxide semiconductor film, 108 a: source electrode, 108 b: drain electrode, 112: gate insulating film, 114: gate electrode, 128: oxide conductive film, 150: transistor, 200: substrate, 202: base insulating film, 206: oxide semiconductor film, 208 a: source electrode, 208 b: drain electrode, 212: gate insulating film, 213: conductive film, 214: gate electrode, 216: interlayer insulating film, 222: conductive film, 224: back gate electrode, 226: protective insulating film, 228: oxide conductive film, 250: transistor, 252: transistor, 308: conductive film, 308 a: source electrode, 308 b: drain electrode, 328: oxide conductive film, 350: transistor, 400: substrate, 402: base insulating film, 406: oxide semiconductor film, 408: conductive film, 408 a: source electrode, 408 b: drain electrode, 412: gate insulating film, 414: gate electrode, 415: contact hole, 416: interlayer insulating film, 431: pixel electrode, 440: wiring, 442: pixel, 444: wiring, 445: electrode, 446: liquid crystal element, 447: capacitor wiring, 448: capacitor, 450: transistor, 500: substrate, 502: base insulating film, 506: oxide semiconductor film, 508 a: source electrode, 508 b: drain electrode, 512: gate insulating film, 514: gate electrode, 516: interlayer insulating film, 518: wiring, 524: back gate electrode, 526: protective insulating film, 528: oxide conductive film, 550: transistor, 600: substrate, 602: base insulating film, 606: oxide semiconductor film, 606 a: crystalline oxide semiconductor film, 606 b: crystalline oxide semiconductor film, 701: substrate, 702: pixel portion, 703: signal line driver circuit, 704: scan line driver circuit, 705: sealant, 706: substrate, 708: liquid crystal layer, 713: liquid crystal element, 715: electrode, 716: wiring, 718 a: FPC, 718 b: FPC, 719: anisotropic conductive film, 720: input terminal, 730: electrode, 731: electrode, 732: insulating film, 733: insulating film, 750: transistor, 801: main body, 802: housing, 803: display portion, 804: keyboard, 811: main body, 812: stylus, 813: display portion, 814: operation button, 815: external interface, 820: e-book reader, 821: housing, 822: housing, 823: display portion, 824: display portion, 825: axis portion, 826: power switch, 827: operation key, 828: speaker, 830: housing, 831: housing, 832: display panel, 833: speaker, 834: microphone, 835: operation key, 836: pointing device, 837: camera lens, 838: external connection terminal, 840: solar cell, 841: external memory slot, 851: main body, 853: eyepiece, 854: operation switch, 855: display portion (B), 856: battery, 857: display portion (A), 860: television set, 861: housing, 863: display portion, and 865: stand.

This application is based on Japanese Patent Application serial No. 2010-197749 filed with Japan Patent Office on Sep. 3, 2010 and Japanese Patent Application serial No. 2010-287403 filed with Japan Patent Office on Dec. 24, 2010, the entire contents of which are hereby incorporated by reference. 

1. A method for manufacturing a semiconductor device, comprising the steps of: performing dehydration treatment or dehydrogenation treatment on a substrate in a substrate processing chamber; introducing the substrate which is dehydrated or dehydrogenated into a first film formation chamber without exposure to air, and forming a first insulating film over the substrate in the first film formation chamber; introducing the substrate into a second film formation chamber without exposure to air, and forming an oxide semiconductor film over the first insulating film in the second film formation chamber; and introducing the substrate into a third film formation chamber without exposure to air and forming an oxide conductive film over the oxide semiconductor film in the second film formation chamber.
 2. The method for manufacturing a semiconductor device, according to claim 1, wherein the first insulating film comprises any one of an aluminum oxide film, an aluminum nitride film, a silicon nitride film, and a silicon nitride oxide film.
 3. The method for manufacturing a semiconductor device, according to claim 1, wherein the dehydration treatment or the dehydrogenation treatment is one of or both of heat treatment which are performed at a temperature higher than or equal to 400° C. and lower than or equal to 650° C. and plasma treatment.
 4. The method for manufacturing a semiconductor device, according to claim 3, wherein the plasma treatment is reverse sputtering treatment.
 5. The method for manufacturing a semiconductor device, according to claim 1, wherein the first insulating film is a silicon oxide film including oxygen atoms which are more than twice as many as silicon atoms per unit volume.
 6. The method for manufacturing a semiconductor device, according to claim 1, wherein the oxide conductive film comprises indium oxide and tin oxide.
 7. The method for manufacturing a semiconductor device, according to claim 1, further comprising the steps of: processing the oxide conductive film and the oxide semiconductor film to form an island-shaped oxide conductive film and an island-shaped oxide semiconductor film; forming a first conductive film over the island-shaped oxide conductive film; processing the first conductive film and the island-shaped oxide conductive film to form a source electrode and a drain electrode and to form oxide conductive films between the source electrode and the island-shaped oxide semiconductor film and between the drain electrode and the island-shaped oxide semiconductor film; introducing the substrate into a fourth film formation chamber and forming a second insulating film covering the source electrode and the drain electrode in the fourth film formation chamber; introducing the substrate into a fifth film formation chamber without exposure to air, and forming a third insulating film comprising any one of an aluminum oxide film, an aluminum nitride film, a silicon nitride film, and a silicon nitride oxide film, over the second insulating film in the fifth film formation chamber; introducing the substrate into a sixth film formation chamber without exposure to air, and forming a second conductive film over the third insulating film in the sixth film formation chamber; and processing the second conductive film to form a back gate electrode.
 8. The method for manufacturing a semiconductor device, according to claim 7, wherein the second insulating film is formed to have a layered structure.
 9. The method for manufacturing a semiconductor device, according to claim 7, wherein the second insulating film is a silicon oxide film or a gallium oxide film.
 10. The method for manufacturing a semiconductor device, according to claim 7, further comprising the step of forming a fourth insulating film comprising any one of an aluminum oxide film, an aluminum nitride film, a silicon nitride film, and a silicon nitride oxide film, over the back gate electrode.
 11. The method for manufacturing a semiconductor device, according to claim 7, wherein any one of the first film formation chamber to the sixth film formation chamber is the same as one or more of the other film formation chambers.
 12. The method for manufacturing a semiconductor device, according to claim 7, wherein a leakage rate of the first film formation chamber to the sixth film formation chamber is less than or equal to 1×10⁻¹⁰ Pa·m³/sec.
 13. The method for manufacturing a semiconductor device, according to claim 1, wherein oxygen is implanted to the first insulating film before forming the oxide semiconductor film
 14. A method for manufacturing a semiconductor device, comprising the steps of: performing dehydration treatment or dehydrogenation treatment on a substrate in a first substrate processing chamber; introducing the substrate which is dehydrated or dehydrogenated into a first film formation chamber without exposure to air, and forming a first insulating film over the substrate in the first film formation chamber; introducing the substrate into a second film formation chamber without exposure to air, and forming an oxide semiconductor film over the first insulating film in the second film formation chamber; introducing the substrate into a second substrate processing chamber without exposure to air and performing heat treatment on the substrate at a temperature higher than or equal to 300° C. and lower than or equal to 650° C. in any one of an inert atmosphere, a reduced-pressure atmosphere, and a dry air atmosphere; and introducing the substrate to a third film formation chamber without exposure to air and forming an oxide conductive film over the oxide semiconductor film in the third film formation chamber.
 15. The method for manufacturing a semiconductor device, according to claim 14, wherein the first insulating film comprises any one of an aluminum oxide film, an aluminum nitride film, a silicon nitride film, and a silicon nitride oxide film.
 16. The method for manufacturing a semiconductor device, according to claim 14, wherein the dehydration treatment or the dehydrogenation treatment is one of or both of heat treatment which are performed at a temperature higher than or equal to 400° C. and lower than or equal to 650° C. and plasma treatment.
 17. The method for manufacturing a semiconductor device, according to claim 16, wherein the plasma treatment is reverse sputtering treatment.
 18. The method for manufacturing a semiconductor device, according to claim 14, wherein the first insulating film is a silicon oxide film including oxygen atoms which are more than twice as many as silicon atoms per unit volume.
 19. The method for manufacturing a semiconductor device, according to claim 14, wherein the oxide conductive film comprises indium oxide and tin oxide.
 20. The method for manufacturing a semiconductor device, according to claim 14, further comprising the steps of: processing the oxide conductive film and the oxide semiconductor film to form an island-shaped oxide conductive film and an island-shaped oxide semiconductor film; forming a first conductive film over the island-shaped oxide conductive film; processing the first conductive film and the island-shaped oxide conductive film to form a source electrode and a drain electrode and to form oxide conductive films between the source electrode and the island-shaped oxide semiconductor film and between the drain electrode and the island-shaped oxide semiconductor film; introducing the substrate into a fourth film formation chamber and forming a second insulating film covering the source electrode and the drain electrode in the fourth film formation chamber; introducing the substrate into a fifth film formation chamber without exposure to air, and forming a third insulating film comprising any one of an aluminum oxide film, an aluminum nitride film, a silicon nitride film, and a silicon nitride oxide film, over the second insulating film in the fifth film formation chamber; introducing the substrate into a sixth film formation chamber without exposure to air, and forming a second conductive film over the third insulating film in the sixth film formation chamber; and processing the second conductive film to form a back gate electrode.
 21. The method for manufacturing a semiconductor device, according to claim 20, wherein the second insulating film is formed to have a layered structure.
 22. The method for manufacturing a semiconductor device, according to claim 20, wherein the second insulating film is a silicon oxide film or a gallium oxide film.
 23. The method for manufacturing a semiconductor device, according to claim 20, further comprising the step of forming a fourth insulating film comprising any one of an aluminum oxide film, an aluminum nitride film, a silicon nitride film, and a silicon nitride oxide film, over the back gate electrode.
 24. The method for manufacturing a semiconductor device, according to claim 20, wherein any one of the first film formation chamber to the sixth film formation chamber is the same as one or more of the other film formation chambers.
 25. The method for manufacturing a semiconductor device, according to claim 20, wherein a leakage rate of the first film formation chamber to the sixth film formation chamber is less than or equal to 1×10⁻¹⁰ Pa·m³/sec.
 26. The method for manufacturing a semiconductor device, according to claim 14, wherein oxygen is implanted to the first insulating film before forming the oxide semiconductor film
 27. A method for manufacturing a semiconductor device, comprising the steps of: performing dehydration treatment or dehydrogenation treatment on a substrate in a first substrate processing chamber; introducing the substrate which is dehydrated or dehydrogenated into a first film formation chamber without exposure to air, and forming a first insulating film over the substrate in the first film formation chamber; and introducing the substrate into a second film formation chamber without exposure to air, and forming a first conductive film over the first insulating film in the second film formation chamber.
 28. The method for manufacturing a semiconductor device, according to claim 27 further comprising the steps of: introducing the substrate into a second substrate processing chamber without exposure to air, and performing dehydration treatment or dehydrogenation treatment on the substrate in the second substrate processing chamber after forming the first insulating film; and introducing the substrate which is dehydrated or dehydrogenated into a third film formation chamber without exposure to air, and forming a second insulating film over the first insulating film in the third film formation chamber, wherein the first conductive film is formed over the second insulating film.
 29. The method for manufacturing a semiconductor device, according to claim 27, wherein the first insulating film comprises an aluminum oxide film, an aluminum nitride film, a silicon nitride film, or a silicon nitride oxide film.
 30. The method for manufacturing a semiconductor device, according to claim 27, wherein the dehydration treatment or the dehydrogenation treatment is one of or both of heat treatment which are performed at a temperature higher than or equal to 400° C. and lower than or equal to 650° C. and plasma treatment.
 31. The method for manufacturing a semiconductor device, according to claim 30, wherein the plasma treatment is reverse sputtering treatment.
 32. The method for manufacturing a semiconductor device, according to claim 27, wherein the first insulating film is a silicon oxide film including oxygen atoms which are more than twice as many as silicon atoms per unit volume.
 33. The method for manufacturing a semiconductor device, according to claim 27, further comprising the steps of: processing the first conductive film to form a gate electrode; introducing the substrate over which the gate electrode is formed into a fourth film formation chamber and forming a gate insulating film over the gate electrode in the fourth film formation chamber; introducing the substrate into a fifth film formation chamber without exposure to air, and forming an oxide semiconductor film over the gate insulating film in the fifth film formation chamber; introducing the substrate into a third substrate processing chamber, without exposure to air, and performing heat treatment on the substrate at a temperature higher than or equal to 300° C. and lower than or equal to 650° C. in any one of an inert atmosphere, a reduced-pressure atmosphere, and a dry air atmosphere; introducing the substrate subjected to the heat treatment into a sixth film formation chamber without exposure to air, and forming an oxide conductive film over the oxide semiconductor film in the sixth film formation chamber; processing the oxide conductive film and the oxide semiconductor film to form an island-shaped oxide conductive film and an island-shaped oxide semiconductor film; forming a conductive film over the island-shaped oxide conductive film; processing the conductive film and the island-shaped oxide conductive film to form a source electrode and a drain electrode and to form oxide conductive films between the source electrode and the island-shaped oxide semiconductor film and between the drain electrode and the island-shaped oxide semiconductor film; introducing the substrate into a seventh film formation chamber and forming an interlayer insulating film covering the source electrode and the drain electrode in the seventh film formation chamber; introducing the substrate into an eighth film formation chamber without exposure to air, and forming a third insulating film comprising any one of an aluminum oxide film, an aluminum nitride film, a silicon nitride film, and a silicon nitride oxide film, over the interlayer insulating film in the eighth film formation chamber; introducing the substrate into a ninth film formation chamber without exposure to air, and forming a second conductive film over the third insulating film in the ninth film formation chamber; and processing the second conductive film to form a back gate electrode.
 34. The method for manufacturing a semiconductor device, according to claim 33, wherein the gate insulating film is formed to have a layered structure.
 35. The method for manufacturing a semiconductor device, according to claim 33, wherein the oxide conductive film comprises indium oxide and tin oxide.
 36. The method for manufacturing a semiconductor device, according to claim 33, wherein the interlayer insulating film is a silicon oxide film or a gallium oxide film.
 37. The method for manufacturing a semiconductor device, according to claim 33, further comprising the step of forming a fourth insulating film comprising any one of an aluminum oxide film, an aluminum nitride film, a silicon nitride film, and a silicon nitride oxide film, over the back gate electrode.
 38. The method for manufacturing a semiconductor device, according to claim 33, wherein any one of the first film formation chamber to the ninth film formation chamber is the same as one or more of the other film formation chambers.
 39. The method for manufacturing a semiconductor device, according to claim 33, wherein a leakage rate of the first film formation chamber to the ninth film formation chamber is less than or equal to 1×10⁻¹⁰ Pa·m³/sec.
 40. The method for manufacturing a semiconductor device, according to claim 1, further comprising the step of introducing the substrate into a transfer chamber evacuated to be in a vacuum state before performing the dehydration treatment or the dehydrogenation treatment in the substrate processing chamber.
 41. The method for manufacturing a semiconductor device, according to claim 14, further comprising the step of introducing the substrate into a transfer chamber evacuated to be in a vacuum state before performing the dehydration treatment or the dehydrogenation treatment in the first substrate processing chamber.
 42. The method for manufacturing a semiconductor device, according to claim 27, further comprising the step of introducing the substrate into a transfer chamber evacuated to be in a vacuum state before performing the dehydration treatment or the dehydrogenation treatment in the first substrate processing chamber. 